Fast optical interconnects together with an associated light emitter that are both compatible
with conventional Si-based complementary metal-oxide-semiconductor (CMOS) integrated …

(57) ABSTRACT A Semiconductor component, Selected from the group com prising a
photodetector, a light emitting diode, an optical modulator and a waveguide. The …

We propose a new class of optoelectronic devices in which the optical properties of the
active material is enhanced by strain generated from micromechanical structures. As a …

In this paper, we review the present status of light emitters based on SiGe nanostructures. In
order to be commercially valuable, these light emitters should be efficient, fast, operational at …

We present experimental verification of type II band alignment in a coherently strained Si 0.7
Ge 0.3/Si (001) quantum well by studying photoluminescence energy shifts under external …

We report on the energy band gap and band lineup of SiGe∕ Si heterostructures either in
the case of coherently strained quantum wells or in the case of SiGe∕ Si self-assembled …

Phononless radiative recombination is observed in luminescence spectra of Ge quantum
wells decorated by self-organized Stranski–Krastanow (S–K) dots grown on Si (100) …

Direct-gap and indirect-gap transitions in strain-compensated Ge/SiGe multiple quantum
wells with Ge-rich SiGe barriers have been studied by optical transmission spectroscopy …

Publisher Summary This chapter discusses a number of diverse approaches for engineering
efficient light emission in silicon. These different approaches are placed in context and their …

The electronic properties of strained Si 1− x Ge x alloys epitaxially grown on (001) Si 1− y
Ge y relaxed substrates for any x and y Ge concentrations are presented here. Our …