Amorphous oxide semiconductor TFTs for displays and imaging
This paper reviews the mechanisms underlying visible light detection based on
phototransistors fabricated using amorphous oxide semiconductor technology. Although this …
phototransistors fabricated using amorphous oxide semiconductor technology. Although this …
Transparent semiconducting oxide technology for touch free interactive flexible displays
Amorphous oxide semiconductor thin film transistors and sensors constitute fundamental
building blocks for a new generation of applications ranging from interactive displays and …
building blocks for a new generation of applications ranging from interactive displays and …
Printed subthreshold organic transistors operating at high gain and ultralow power
Overcoming the trade-offs among power consumption, fabrication cost, and signal
amplification has been a long-standing issue for wearable electronics. We report a high …
amplification has been a long-standing issue for wearable electronics. We report a high …
[HTML][HTML] Effects of dopants in InOx-based amorphous oxide semiconductors for thin-film transistor applications
Amorphous metal oxide thin-film transistors (TFTs) are fabricated using InO x-based
semiconductors doped with TiO 2, WO 3, or SiO 2. Even at low-dopant densities, the …
semiconductors doped with TiO 2, WO 3, or SiO 2. Even at low-dopant densities, the …
Effect of channel thickness on performance of ultra-thin body IGZO field-effect transistors
MJ Kim, HJ Park, S Yoo, MH Cho… - IEEE Transactions on …, 2022 - ieeexplore.ieee.org
Amorphous indium–gallium–zinc oxide (a-IGZO) is a promising channel material for an
upper transistor in monolithic three-dimensional devices. Although the field-effect transistors …
upper transistor in monolithic three-dimensional devices. Although the field-effect transistors …
Chain length dependence of electron transport in an n-type conjugated polymer with a rigid-rod chain topology
Most currently known n-type conjugated polymers have a semiflexible chain topology, and
their charge carrier mobilities are known to peak at modest chain lengths of below 40–60 …
their charge carrier mobilities are known to peak at modest chain lengths of below 40–60 …
[HTML][HTML] Localized tail states and electron mobility in amorphous ZnON thin film transistors
The density of localized tail states in amorphous ZnON (a-ZnON) thin film transistors (TFTs)
is deduced from the measured current-voltage characteristics. The extracted values of tail …
is deduced from the measured current-voltage characteristics. The extracted values of tail …
Stable amorphous In2O3-based thin-film transistors by incorporating SiO2 to suppress oxygen vacancies
Incorporating SiO 2 into amorphous In 2 O 3-based thin films is found to suppress the
formation of unstable oxygen vacancies. The SiO 2 incorporated thin film transistors …
formation of unstable oxygen vacancies. The SiO 2 incorporated thin film transistors …
Flexible ultralow-power sensor interfaces for e-skin
Thin-film electronics has hugely benefitted from low-cost processes, large-area
processability, and multifunctionality. This has not only stimulated innovation in display and …
processability, and multifunctionality. This has not only stimulated innovation in display and …
Study of the hole transport processes in solution‐processed layers of the wide bandgap semiconductor copper (I) thiocyanate (CuSCN)
P Pattanasattayavong, AD Mottram… - Advanced Functional …, 2015 - Wiley Online Library
Wide bandgap hole‐transporting semiconductor copper (I) thiocyanate (CuSCN) has
recently shown promise both as a transparent p‐type channel material for thin‐film …
recently shown promise both as a transparent p‐type channel material for thin‐film …