Si-glass bonding is one of the most crucial vacuum packaging methods in semiconductor
devices; however, high temperatures (> 300° C) are required to achieve a high bonding …

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Low-temperature direct bonding is an attractive technique for joining mirror polished
dissimilar materials with large mismatch in the coefficient of thermal expansion or/and lattice …

The joining of glass and Mg by a combination of anodic bonding and vacuum diffusion
bonding with Al as the interlayer was achieved in one step. The microstructures of glass/Mg …

Most of the current SOI high-temperature pressure sensors are packaged in lead bonding,
where the gold wire is in direct contact with the bonding bump and filled with silicone oil as a …

Confocal Raman microscopy (CRM) is extensively employed in several fields owing to
providing molecular fingerprint information without destroying and labelling samples. Most …

Plasma‐assisted epitaxially grown silicon (plasma‐epi Si) is a new silicon‐based material
with a tailorable nanostructure. Nanovoids can be introduced into plasma‐epi Si during …

The research on laser welding of glass and metal mainly focuses on ultrashort pulse laser or
nanosecond laser, since continuous wave (CW) laser cannot be directly applied to the …

The connection of silicon carbide (SiC) to glass is important for the development of
microelectromechanical systems. In the study, glass-SiC-glass with SiC as common anode …

A series of hyperbranched polyurethane elastomers (PEO‐HBPUEs) as polymer electrolyte
substrate materials was developed for anodic bonding with aluminum (Al) foil in micro …