Integrated silicon directly modulated light source using p-well in standard CMOS technology
K Xu - IEEE Sensors Journal, 2016 - ieeexplore.ieee.org
This paper studies integrated silicon light emitter implemented in standard CMOS
technologies. A new MOS-like structure utilizing deep p-well is presented, and compared …
technologies. A new MOS-like structure utilizing deep p-well is presented, and compared …
Apparatus and method for dynamic diagnostic testing of integrated circuits
N Pakdaman, S Kasapi, I Goldberger - US Patent 6,859,031, 2005 - Google Patents
Systems and methods consistent with principles of the present invention allow contactleSS
measuring of various kinds of electrical activity within an integrated circuit. The invention can …
measuring of various kinds of electrical activity within an integrated circuit. The invention can …
Si-based current-density-enhanced light emission and low-operating-voltage light-emitting/receiving designs
HC Lee, CK Liu - Solid-state electronics, 2005 - Elsevier
By the standard Si-CMOS process, several designs are investigated of low-operating-
voltage light-emitting/receiving devices. Our forward-biasing Si-LED designs having power …
voltage light-emitting/receiving devices. Our forward-biasing Si-LED designs having power …
Current–voltage characteristics and increase in the quantum efficiency of three-terminal gate and avalanche-based silicon LEDs
K Xu - Applied Optics, 2013 - opg.optica.org
In this paper, the emission of visible light by a monolithically integrated silicon p–n junction
under reverse-bias is discussed. The modulation of light intensity is achieved using an …
under reverse-bias is discussed. The modulation of light intensity is achieved using an …
All Si-based low operating-voltage and low power-dissipation device for optical interface
HC Lee, SC Lee, YP Lin, CK Liu - IEICE transactions on electronics, 2005 - search.ieice.org
Based on the Si CMOS process, a low operating voltage and low power light emitting device
is presented. It has a power transfer efficiency of 1 to 2 orders higher than previous reports …
is presented. It has a power transfer efficiency of 1 to 2 orders higher than previous reports …