In this review the latest advances in the field of nanostructured photodetectors are
considered, stating the types and materials, and highlighting the features of operation …

The optical properties of GeSiSn/Si multiple quantum wells (MQWs) and GeSn
nanostructures are studied in the range of 1.3–4 µm. An annealing at the temperature of …

In this paper, we analyze superstructural transitions during epitaxial growth of two-
dimensional layers and the formation of quantum dots by the Stranski–Krastanov …

In this paper, we comprehensively consider the effect of the dependence of elastic strain on
the thickness of deposited material on the formation of two-dimensional layers and quantum …

The initial stages of Ge 1− x− y Si x Sn y film growth on Ge substrate were investigated and
the kinetic diagram of the morphological state for GeSiSn films was built. The kinetic diagram …

This paper presents the results of studying the processes of epitaxial growth of germanium
on silicon with crystallographic orientation (111) in a wide temperature range. The …

Tuning the composition in group IV alloys can significantly change their electronic structures,
enabling a broad range of properties for electronic, photonic, and topological applications …

In this paper, we discuss how the deliberate and controlled introduction of strain can be
used to improve the performance of semiconductor lasers. We show how strain-induced …

Germanium/silicon systems are among the most promising materials for development of
current semiconductor electronics and photonics. Structures with germanium quantum dots …

The regularities of the GeSn and SiSn nanostructure formation on Si and Ge (1 0 0)
substrates on the vapor–liquid-crystal mechanism were studied. It was shown that either …