Investigation of In Situ SiN as Gate Dielectric and Surface Passivation for GaN MISHEMTs

H Jiang, C Liu, Y Chen, X Lu… - IEEE Transactions on …, 2017 - ieeexplore.ieee.org
In this paper, we present a systematic investigation of metal–organic chemical vapor
deposition-grown in situ SiN as the gate dielectric and surface passivation for AlGaN/GaN …

Normally-off HEMTs With Regrown p-GaN Gate and Low-Pressure Chemical Vapor Deposition SiNx Passivation by Using an AlN Pre-Layer

Y Zhong, S Su, X Chen, Y Zhou, J He… - IEEE Electron …, 2019 - ieeexplore.ieee.org
Normally-off HEMTs have been fabricated with regrown p-GaN gate and SiN x passivation
by Low-pressure chemical vapor deposition (LPCVD) using an AlN pre-layer, featuring a …

Surface Dispersion Suppression in High-Frequency GaN Devices

P Zhu, X Ni, Q Fan, X Gu - Crystals, 2022 - mdpi.com
GaN-based high electron mobility transistors (HEMTs) are shown to have excellent
properties, showing themselves to perform well among the throng of solid-state power …

8.7 W/mm output power density and 42% power-added-efficiency at 30 GHz for AlGaN/GaN HEMTs using Si-rich SiN passivation interlayer

JL Liu, JJ Zhu, MH Mi, Q Zhu, SY Liu, PF Wang… - Applied Physics …, 2022 - pubs.aip.org
In this work, high-performance millimeter-wave AlGaN/GaN structures for high-electron-
mobility transistors (HEMTs) are presented using a Si-rich SiN passivation layer. The …

Accurate modeling of GaN HEMT RF behavior using an effective trapping potential

A Prasad, M Thorsell, H Zirath… - IEEE Transactions on …, 2017 - ieeexplore.ieee.org
This paper investigates the back-gating effects due to traps, and presents a new nonlinear
trap modeling approach suitable for gallium nitride (GaN) high electron mobility transistors …

Improved Power Performance and the Mechanism of AlGaN/GaN HEMTs Using Si-Rich SiN/Si3N4 Bilayer Passivation

J Liu, M Mi, J Zhu, S Liu, P Wang… - … on Electron Devices, 2021 - ieeexplore.ieee.org
AlGaN/GaN high-electron-mobility transistors (HEMTs) with Si-rich SiN/Si 3 N 4 bilayer
passivation were studied in this article. The use of a Si-rich SiN interlayer leads to improved …

Impact of silicon nitride stoichiometry on the effectiveness of AlGaN/GaN HEMT field plates

WM Waller, M Gajda, S Pandey… - … on Electron Devices, 2017 - ieeexplore.ieee.org
Field plate (FP) control of current collapse and channel electric field distribution in
AlGaN/GaN High Electron Mobility Transistors is investigated as a function of low-pressure …

High frequency N-polar GaN planar MIS-HEMTs on sapphire with high breakdown and low dispersion

X Zheng, H Li, E Ahmadi, K Hestroffer… - 2016 Lester …, 2016 - ieeexplore.ieee.org
N-polar planar GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-
HEMTs) grown by metal-organic chemical vapor deposition on sapphire substrate with a …

The Modulation Effect of LPCVD-SixNy Stoichiometry on 2-DEG Characteristic of UTB AlGaN/GaN Heterostructure

L Zhu, Q Zhou, K Chen, W Gao, Y Cai… - … on Electron Devices, 2022 - ieeexplore.ieee.org
In this work, the impact of low-pressure chemical vapor deposition (LPCVD)-Si x N y
stoichiometry on 2-D electron gas (2-DEG) transport characteristics of the AlGaN (3.9 …

Nitride spacer aided 0.15 μm AlGaN/GaN HEMT fabrication with optimized gate patterning process

B Lv, L Zhang, J Mo - Applied Physics Letters, 2024 - pubs.aip.org
I-line stepper is widely used in large scale device manufacturing with limited achievable
critical dimension by itself. With the aid of the spacer sidewall, the critical dimension can be …