Carbon nanotube field effect transistor (CNTFET) is swiftly becoming an alternative to
conventional CMOS transistors due to superior transport properties, improved current …

This paper explores an ultra-low-power 10T subthreshold SRAM with high stabilities based
on 10-nm FinFETs. To prove the superiority of the proposed 10T SRAM's performance, a …

Higher charge mobility, gate control, and better electrostatics are the key reasons that make
carbon nanotube field effect transistor (CNTFET) a better candidate to become the …

Radiation‐induced soft errors are becoming a key challenge in satellite‐based
communication. The worst‐hit component of such devices is static random‐access memory …

Recent advancements in high-performance processor operation have nurtured the
requirement of low power, reliable, and fast static random-access memory (SRAM). Scaling …

With the aggressive growth of the internet of things-based applications in the domestic and
industrial domain, the embedded static memory is also under renovation stage to eliminate …

In the present scenario, the devices supporting neighbor discovery are going through the
renovation phase, and crossing the classical barrier such as the trade-off between power …

The occurrences of Multiple Cell Upset (MCU) are more liable to arise in modern memory
systems with the continuous upgradation of microelectronics technology from micron to deep …

The modern era expects great computing power, portability, and minimal power
consumption from all electronic devices. SRAM is widely valued in the consumer electronics …

A novel read circuit for low power dual bit-line SRAM is proposed. The local sensing circuit
uses differential cell current and regenerative feedback to turn into latch. This allows lower of …