Influence of Yb-doping on the thermoelectric properties of Pb1− xYbxTe alloy synthesized using solid-state microwave
A Hmood, A Kadhim, HA Hassan - Journal of alloys and compounds, 2012 - Elsevier
The semi-magnetic semiconductor thermoelectric alloy Pb1− xYbxTe (0.0> x< 0.075) was
synthesized by solid-state microwave. Polycrystalline was prepared by high-purity powders …
synthesized by solid-state microwave. Polycrystalline was prepared by high-purity powders …
Enhanced thermoelectric properties of (Pb1− xYbxTe) 0.15 (GeTe) 0.85 composites due to phase separation and Yb doping
JF Deng, JQ Li, RF Ye, XY Liu, FS Liu, WQ Ao - Journal of alloys and …, 2014 - Elsevier
Abstract The Yb doped Ge-rich (Pb 1− x Yb x Te) 0.15 (GeTe) 0.85 composites with x= 0,
0.01, 0.03, 0.05, 0.10, 0.15 and 0.20 were prepared by melting, solutioning and quenching …
0.01, 0.03, 0.05, 0.10, 0.15 and 0.20 were prepared by melting, solutioning and quenching …
[HTML][HTML] Improved thermoelectric properties in solid state microwave of Zn1-xYbxSb compound by Yb for Zn substitution
A Kadhim - Results in Materials, 2024 - Elsevier
In this research, the Zn-Yb-Sb materials in the form Zn 1-x Yb x Sb; x= 0.02 to 0.8, were
composed by a solid-state microwave method. These samples were examined to determine …
composed by a solid-state microwave method. These samples were examined to determine …
Yb-doped SnTe semimetal thin films deposited by thermal evaporation: Structural, electrical, and thermoelectric properties
A Hmood, A Kadhim, HA Hassam - Superlattices and Microstructures, 2014 - Elsevier
Sn monochalcogenide and Yb-doped Sn 1− x Yb x Te (0.0⩾ x⩽ 0.1) semimetals, which are
known for their usefulness as efficient thermoelectric (TE) materials, were prepared by solid …
known for their usefulness as efficient thermoelectric (TE) materials, were prepared by solid …
Electrical properties of lead telluride single crystals doped with Gd
A Todosiciuc, A Nicorici, E Condrea… - CAS 2012 …, 2012 - ieeexplore.ieee.org
Temperature dependences of electric conductivity, free carrier concentration and mobility in
single-crystalline PbTe: Gd samples with a varied impurity content are investigated. The …
single-crystalline PbTe: Gd samples with a varied impurity content are investigated. The …
Deep impurity levels in vanadium-doped Pb1− xMnxTe solid solutions
AA Dobrovolsky, AI Artamkin, P Dziawa… - Semiconductor …, 2008 - iopscience.iop.org
Measurements of electric and magnetic properties of Pb 1− x Mn x Te (V) solid solutions
have been performed in the temperature range 4.2–300 K. It is demonstrated that the Fermi …
have been performed in the temperature range 4.2–300 K. It is demonstrated that the Fermi …
LnxPb1− xTe (Ln: Nd3+, Yb3+) nanomaterials: Synthesis, characterization, physical properties, and optical properties
Y Hanifehpour, N Hamnabard, AV Chandran… - Journal of Industrial and …, 2015 - Elsevier
Abstract Ln x Pb 1− x Te (Ln: Nd 3+, Yb 3+) nanomaterials were synthesized using the facile
hydrothermal method. The prepared samples were characterized using X-ray diffraction …
hydrothermal method. The prepared samples were characterized using X-ray diffraction …
[HTML][HTML] Effect of magnetic Gd impurities on the electrical properties of PbTe single crystals
A Todosiciuc, A Nicorici, E Condrea… - Электронная …, 2013 - cyberleninka.ru
Under investigation are temperature dependences of electric conductivity, free carrier
concentration and mobility in single-crystalline PbTe: Gd samples with varied impurity …
concentration and mobility in single-crystalline PbTe: Gd samples with varied impurity …
Optical properties of PbTe and PbSnTe doped with Cr
PM Nikolić, KM Paraskevopoulos, SS Vujatović… - Journal of alloys and …, 2009 - Elsevier
Single crystal samples of PbTe and PbSnTe doped with Cr were made using the Bridgman
technique. Far infrared diagrams of PbTe samples doped with 0.4 at.%, 0.8 at.% and 1at …
technique. Far infrared diagrams of PbTe samples doped with 0.4 at.%, 0.8 at.% and 1at …
[HTML][HTML] Инфракрасное гашение фотопроводимости в кремнии с многозарядными кластерами марганца
МК Бахадырханов, СБ Исамов… - Электронная …, 2013 - cyberleninka.ru
Обнаружен эффект самогашения фотопроводимости в кремнии с многократно
заряженными нанокластерами атомов марганца в области h= 0, 4÷ 0, 5 эВ …
заряженными нанокластерами атомов марганца в области h= 0, 4÷ 0, 5 эВ …