GaN technology is not only gaining traction in power and RF electronics but is also rapidly
expanding into other application areas including digital and quantum computing electronics …

The ever‐increasing power density and operation frequency in electrical power conversion
systems require the development of power devices that can outperform conventional Si …

Over the last decade, gallium nitride (GaN) has emerged as an excellent material for the
fabrication of power devices. Among the semiconductors for which power devices are …

Gallium nitride (GaN) is a compound semiconductor that has tremendous potential to
facilitate economic growth in a semiconductor industry that is silicon-based and currently …

Vertical gallium nitride (GaN) power devices have attracted increased attention due to their
superior high-voltage and high-current capacity as well as easier thermal management than …

Gallium nitride (GaN) is becoming a mainstream semiconductor for power and radio-
frequency (RF) applications. While commercial GaN devices are increasingly being adopted …

Silicon-based power devices are reaching their fundamental performance limit. The use of
wide-bandgap semiconductors with superior material properties over silicon offers the …

As a representative wide bandgap semiconductor material, gallium nitride (GaN) has
attracted increasing attention because of its superior material properties (eg, high electron …

This letter demonstrates a novel technology to fabricate fully vertical GaN-on-Si power
diodes with state-of-the-art performance. Si substrate and buffer layers were selectively …

We demonstrate the first GaN vertical transistor on silicon, based on a 6.7--thick npn
heterostructure grown on 6-inch silicon substrate by metal organic chemical-vapor …