Advances in nanofabrication, characterization tools, and the drive to commercialize
nanotechnology products have contributed to the significant increase in research on …

We report the growth of exceptionally well aligned and vertically oriented GaN nanowires on
r-plane sapphire wafers via metal–organic chemical vapour deposition. The nanowires were …

This paper reports on the growth, structural and optical properties of GaN free-stranding
nanowires synthesized in catalyst-free mode on Si (111) substrate by plasma-assisted …

GaN growth on silicon has recently found its way into products as transistor devices for high
frequencies and high‐voltage applications as well as for light emitting diodes (LEDs). Here …

The current research of GaN nanowires on diamond substrates is reviewed and extended by
recent results. Both the self-assembled and the selective area growth mechanisms using …

In this study, the process of nanosphere lithography was developed and applied to LED
surface texturing and nanorod device fabrication. We observed a texture-size-dependent …

We present a practical process to fabricate InGaN-GaN multiple quantum well nanorod
structures. By using silica nanoparticles as the etch mask and followed by dry etching …

In this paper, GaN thin film production was realized by thermionic vacuum arc (TVA), a
plasma deposition technique, for the first time. We present a new deposition mechanism for …

Dislocation-free and strain-free GaN nanopillars, grown on Si by molecular beam epitaxy,
were used as nanoseeds for a new form of epitaxial lateral overgrowth (ELO) by …

Single crystalline and single phase In x Ga 1− x N nanopillars were grown spontaneously on
(111) silicon substrate by plasma assisted molecular beam epitaxy. The surface …