A reliable low standby power 10T SRAM cell with expanded static noise margins
E Abbasian, F Izadinasab… - IEEE Transactions on …, 2022 - ieeexplore.ieee.org
This paper explores a low standby power 10T (LP10T) SRAM cell with high read stability
and write-ability (RSNM/WSNM/WM). The proposed LP10T SRAM cell uses a strong cross …
and write-ability (RSNM/WSNM/WM). The proposed LP10T SRAM cell uses a strong cross …
Ultra-low-power and stable 10-nm FinFET 10T sub-threshold SRAM
E Abbasian, S Birla, M Gholipour - Microelectronics Journal, 2022 - Elsevier
This paper explores an ultra-low-power 10T subthreshold SRAM with high stabilities based
on 10-nm FinFETs. To prove the superiority of the proposed 10T SRAM's performance, a …
on 10-nm FinFETs. To prove the superiority of the proposed 10T SRAM's performance, a …
A single-bitline 9T SRAM for low-power near-threshold operation in FinFET technology
E Abbasian, M Gholipour, S Birla - Arabian Journal for Science and …, 2022 - Springer
Static random-access memories (SRAMs), which are the most ubiquitous in modern system-
on-chips, suffer from high power dissipation and poor stability in advanced complementary …
on-chips, suffer from high power dissipation and poor stability in advanced complementary …
Design of a Schmitt-trigger-based 7T SRAM cell for variation resilient low-energy consumption and reliable internet of things applications
E Abbasian, M Gholipour - AEU-International Journal of Electronics and …, 2021 - Elsevier
The internet of things (IoTs)-based systems require battery-enabled energy-efficient memory
circuits to operate at low voltage domain, especially below the transistor's threshold. This …
circuits to operate at low voltage domain, especially below the transistor's threshold. This …
A robust and write bit-line free sub-threshold 12T-SRAM for ultra low power applications in 14 nm FinFET technology
In this paper, a robust 12T-SRAM memory cell at sub-threshold voltage is designed to
reduce power consumption for low power applications, that in addition to reducing power …
reduce power consumption for low power applications, that in addition to reducing power …
A schmitt-trigger-based low-voltage 11 T SRAM cell for low-leakage in 7-nm FinFET technology
E Abbasian, E Mani, M Gholipour… - Circuits, Systems, and …, 2022 - Springer
This paper proposes a modified Schmitt-trigger (ST)-based single-ended 11 T (MST11T)
SRAM cell. The proposed cell is best suited to ultra-low voltage applications. Two ST-based …
SRAM cell. The proposed cell is best suited to ultra-low voltage applications. Two ST-based …
Design of a highly stable and robust 10T SRAM cell for low-power portable applications
E Abbasian, M Gholipour - Circuits, Systems, and Signal Processing, 2022 - Springer
This paper investigates a novel highly stable and robust single-ended 10T SRAM cell
appropriate for low-power portable applications. The cell core of the proposed design is a …
appropriate for low-power portable applications. The cell core of the proposed design is a …
A comprehensive analysis of different SRAM cell topologies in 7-nm FinFET technology
E Abbasian, S Birla, M Gholipour - Silicon, 2021 - Springer
Complementary metal-oxide-semiconductor (CMOS) device faces various unknown short
channel effects (SCEs) such as subthreshold leakage and drain-induced barrier lowering …
channel effects (SCEs) such as subthreshold leakage and drain-induced barrier lowering …
A hybrid SRAM/RRAM in-memory computing architecture based on a reconfigurable SRAM sense amplifier
In this paper, a hybrid memory architecture based on a new array of SRAM and resistive
random-access memory (RRAM) cells is proposed to perform in-memory computing by …
random-access memory (RRAM) cells is proposed to perform in-memory computing by …
A write bit-line free sub-threshold SRAM cell with fully half-select free feature and high reliability for ultra-low power applications
In this paper, a robust sub-threshold 13 T-SRAM cell is designed, which in addition to
reducing power and energy consumption can show high reliability and have the least error …
reducing power and energy consumption can show high reliability and have the least error …