In 1989, one author of this paper (AR) published the very first review paper on InAsSb
infrared detectors. During the last thirty years, many scientific breakthroughs and …

Optical properties of the rat head tissues (brain cortex, cranial bone and scalp skin) are
assessed, aiming at transcranial light applications such as optical imaging and …

This new edition of Infrared and Terahertz Detectors provides a comprehensive overview of
infrared and terahertz detector technology, from fundamental science to materials and …

The InAs/InAsSb (Gallium-free) type-II strained-layer superlattice (T2SLS) has emerged in
the last decade as a viable infrared detector material with a continuously adjustable band …

Advances in bulk III-V semiconductor material such as InGaAsSb and metamorphic InAsSb,
as well as in a variety of type-II superlattices such as InGaAs/GaAsSb, InAs/GaSb, and …

We demonstrate an extended short-wave infrared (e-SWIR) photodetector composed of an
InAs/GaAs (111) A heterostructure with interface misfit dislocations. The layer structure of the …

We reported on the material and device characterization of a dual-band unipolar barrier
infrared photodetector with n-In 0.28 Ga 0.72 As 0.25 Sb 0.75 bulk and InAs/GaSb type-II …

We demonstrate silicon-based pnp pnp floating-base GeSn heterojunction phototransistors
with enhanced optical responsivity for efficient short-wave infrared (SWIR) photodetection …

Electrical and optical characterisation of InGaAsSb-based photodetectors for SWIR
applications - IOPscience Skip to content IOP Science home Accessibility Help Search all …

Abstract Short Wave Infra-Red (SWIR) photodetectors operating above the response cutoff
of InGaAs-based detectors (1.7–2.5 μm) are required for both defense and civil applications …