The effect of Mn/Nb doping on dielectric and ferroelectric properties of PZT thin films prepared by sol–gel process
H Sun, Y Zhang, X Liu, S Guo, Y Liu… - Journal of Sol-Gel Science …, 2015 - Springer
Mn/Nb-doped lead zirconate titanate thin films (PMZT/PNZT) were fabricated by sol–gel
process. The effects of Mn/Nb dopant on the phase development, microstructure …
process. The effects of Mn/Nb dopant on the phase development, microstructure …
Enhanced curie temperature and high heat resistivity of PMnN-PZT monocrystalline thin film on Si
In this study, a c-axis-oriented PMnN-PZT monocrystalline thin film was sputter-deposited on
a Si substrate covered with buffer layers. Curie temperature, T c, was estimated by …
a Si substrate covered with buffer layers. Curie temperature, T c, was estimated by …
Effect of La and W dopants on dielectric and ferroelectric properties of PZT thin films prepared by sol–gel process
M Xiao, Z Zhang, W Zhang, P Zhang - Applied Physics A, 2018 - Springer
La or W-doped lead zirconate titanate thin films (PLZT or PZTW) were prepared on
platinized silicon substrates by sol–gel process. The effects of La or W dopant on the phase …
platinized silicon substrates by sol–gel process. The effects of La or W dopant on the phase …
Strongly enhanced polarization and dielectric breakdown strength of PZT95/5 by doping of Ce4+ and Nb5+
In this report, we investigate ferroic properties of Nb 5+ and Ce 4+ co-doped bZr 0.95 Ti 0.05
O 3 (PZT95/5) ceramics, prepared via conventional solid state reaction route. Room …
O 3 (PZT95/5) ceramics, prepared via conventional solid state reaction route. Room …
[HTML][HTML] 磁控溅射法制备PMN-PZT/PZT 异质薄膜的电性能
宛瑛泽， 李克洪， 孟令凤， 张帅， 杨志峰， 邹赫麟 - Material Sciences, 2022 - hanspub.org
在Pt (111)/Ti/SiO 2/Si (100) 基底上覆盖Pb 1.2 (Zr 0.40, Ti 0.60) O 3 种子层,
使用磁控溅射法在种子层上交替沉积0.3 Pb (Mg 1/3 Nb 2/3) O 3-0.7 Pb (Zr 0.52 Ti 0.48) O 3 …
使用磁控溅射法在种子层上交替沉积0.3 Pb (Mg 1/3 Nb 2/3) O 3-0.7 Pb (Zr 0.52 Ti 0.48) O 3 …
Characterization of La-doped xBiInO3 (1− x) PbTiO3 piezoelectric films deposited by the radio-frequency magnetron sputtering method
KX Sun, SY Zhang, K Wasa, XJ Shui - Chinese Physics Letters, 2016 - iopscience.iop.org
La-doped and undoped xBiInO 3-(1− x) PbTiO 3 (BI-PT) thin films are deposited on (101)
SrRuO 3/(100) Pt/100) MgO substrates by the rf-magnetron sputtering method. The …
SrRuO 3/(100) Pt/100) MgO substrates by the rf-magnetron sputtering method. The …
Experimental and numerical study on transverse piezoelectricity of xBiInO3–(1− x) PbTiO3 films by multilayer cantilevers
K Sun, S Zhang, X Shui, K Wasa - Japanese Journal of Applied …, 2018 - iopscience.iop.org
Experimental and numerical study on transverse piezoelectricity of xBiInO3–(1 − x)PbTiO3 films
by multilayer cantilevers - IOPscience Skip to content IOP Science home Accessibility Help …
by multilayer cantilevers - IOPscience Skip to content IOP Science home Accessibility Help …
Ferroelectricity, Piezoelectricity, and Dielectricity of 0.06 PMnN‐0.94 PZT (45/55) Thin Film on Silicon Substrate
T Zhang, H Li, C Zhou, H Zhu, Y Zhou… - Journal of …, 2015 - Wiley Online Library
The high piezoelectricity and high quality factor ferroelectric thin films are important for
electromechanical applications especially the micro electromechanical system (MEMS). The …
electromechanical applications especially the micro electromechanical system (MEMS). The …
[HTML][HTML] Effects of La-doping on piezoelectricity properties of 0.15 BiInO3-0.85 PbTiO3 thin films deposited by RF magnetron sputtering method
K Sun, S Zhang, X Shui, C Liu, Y Zhang, K Wasa - AIP Advances, 2019 - pubs.aip.org
La-doped 0.15 BiInO 3-0.85 PbTiO 3 thin films are deposited on SRO/Pt/MgO substrates by
RF-magnetron sputtering method. The structures of the thin films are characterized by XRD …
RF-magnetron sputtering method. The structures of the thin films are characterized by XRD …
Electromechanical Strain Mechanisms and Magnetoelectric Coupling in Polycrystalline Bismuth Ferrite
L Liu - 2018 - unsworks.unsw.edu.au
Bismuth ferrite, BiFeO3, is both a piezoelectric and multiferroic material with coupled
ferroelectricity, ferroelasticity and antiferromagnetism, which can significantly improve the …
ferroelectricity, ferroelasticity and antiferromagnetism, which can significantly improve the …