[HTML][HTML] Prospects of IMPATT devices based on wide bandgap semiconductors as potential terahertz sources
A Acharyya, JP Banerjee - Applied Nanoscience, 2014 - Springer
In this paper the potentiality of impact avalanche transit time (IMPATT) devices based on
different semiconductor materials such as GaAs, Si, InP, 4H-SiC and Wurtzite-GaN (Wz …
different semiconductor materials such as GaAs, Si, InP, 4H-SiC and Wurtzite-GaN (Wz …
Potentiality of IMPATT devices as terahertz source: an avalanche response time-based approach to determine the upper cut-off frequency limits
A Acharyya, JP Banerjee - IETE Journal of Research, 2013 - Taylor & Francis
Abstract Potentiality of Impact Avalanche Transit Time (IMPATT) devices based on different
semiconductor materials such as InP, 4H-SiC, and Wurtzite-GaN (Wz-GaN) has been …
semiconductor materials such as InP, 4H-SiC, and Wurtzite-GaN (Wz-GaN) has been …
[PDF][PDF] Dynamic characteristics of III-V and IV-IV semiconductor based transit time devices in the terahertz regime: a comparative analysis
M Mukherjee, S Banerjee, JP Banerjee - Terahertz Science and …, 2010 - Citeseer
High-frequency characteristics of IMPATT Oscillators based on III-V Indium Phosphide (InP),
III-V Wurtzite Gallium Nitride (Wz-GaN) and IV-IV Silicon Carbide (3C, 4H and 6H polytypes) …
III-V Wurtzite Gallium Nitride (Wz-GaN) and IV-IV Silicon Carbide (3C, 4H and 6H polytypes) …
[HTML][HTML] Study of p-SiC/n-GaN hetero-structural double-drift region IMPATT diode
Y Dai, Q Ye, J Dang, Z Lu, W Zhang, X Lei, Y Zhang… - Micromachines, 2021 - mdpi.com
Nowadays, the immature p-GaN processes cannot meet the manufacturing requirements of
GaN impact ionization avalanche transit time (IMPATT) diodes. Against this backdrop, the …
GaN impact ionization avalanche transit time (IMPATT) diodes. Against this backdrop, the …
[PDF][PDF] Influence of tunnel current on DC and dynamic properties of Si Based terahertz IMPATT source
A Acharyya, M Mukherjee, JP Banerjee - Terahertz Science and …, 2011 - tstnetwork.org
The effect of tunneling current on the high frequency properties of double drift (p+pnn+)
IMPATT devices based on silicon designed to operate at 0.3 THz has been investigated by …
IMPATT devices based on silicon designed to operate at 0.3 THz has been investigated by …
Measurement of noise and efficiency of 4H-SiC IMPATT diode at Ka-band
J Sengupta, GC Ghivela, A Gajbhiye… - International Journal of …, 2016 - Taylor & Francis
In this paper, different DC parameters such as the efficiency, voltage drop along the diode,
quality factor, resistance and the noise measurement on a one dimensional n+ npp+ DDR …
quality factor, resistance and the noise measurement on a one dimensional n+ npp+ DDR …
压电AlN MEMS 的新进展(续).
赵正平 - Micronanoelectronic Technology, 2024 - search.ebscohost.com
Si 基微电子机械系统(MEMS) 经过三十余年的发展已进入智能微系统的发展阶段,
已成为当今MEMS 技术创新发展的主流. 当今半导体材料技术的科研已进入超宽禁带半导体的 …
已成为当今MEMS 技术创新发展的主流. 当今半导体材料技术的科研已进入超宽禁带半导体的 …
Thz solid-state source based on impatt devices
S Banerjee - Terahertz Biomedical and Healthcare Technologies, 2020 - Elsevier
In recent years, a lot of research interest has been generated for the research and
development of terahertz (THz) components, sources, and detectors because of their various …
development of terahertz (THz) components, sources, and detectors because of their various …
[PDF][PDF] A comparative study on indium phosphide and α-gallium nitride based impatt oscillators for terahertz communication
J Mukhopadhyay, S Banerjee… - Journal of …, 2010 - researchgate.net
The properties and performance of p+pnn+ III-V semiconductor, viz., Indium Phosphide (InP)
and Wurtzite phase of Gallium Nitride (Wz-GaN or α-GaN) based DDR Impatt diodes at …
and Wurtzite phase of Gallium Nitride (Wz-GaN or α-GaN) based DDR Impatt diodes at …
[PDF][PDF] Diamond based DDR IMPATTs: prospects and potentiality as millimeter-wave source at 94 GHz atmospheric window
A Acharyya, K Datta, R Ghosh, M Sarkar… - …, 2013 - academia.edu
Large-signal simulation is carried out in this paper to investigate the prospects and
potentiality of Double-Drift Region (DDR) Impact Avalanche Transit Time (IMPATT) device …
potentiality of Double-Drift Region (DDR) Impact Avalanche Transit Time (IMPATT) device …