Review of Radiation-Induced Effects on β-Ga2O3 Materials and Devices
β-Ga2O3 has become an ultimate choice of emerging new-generation material for its wide
range of compelling applications in power electronics. In this review, we have explored the …
range of compelling applications in power electronics. In this review, we have explored the …
Ionizing radiation defects and reliability of Gallium Nitride-based III-V semiconductor devices: a comprehensive review
The remote sensing and satellite community working for space organizations have
expressed interest in building advanced devices with potential choices for Gallium Nitride …
expressed interest in building advanced devices with potential choices for Gallium Nitride …
Swift heavy ion irradiation-induced modifications in the electrical and surface properties of β-Ga2O3
The electrical device characteristics of Ni/β-Ga 2 O 3 vertical Schottky barrier diodes (SBDs)
were measured in situ during the irradiation of 120 MeV Ag 7+ swift heavy ions (SHIs) …
were measured in situ during the irradiation of 120 MeV Ag 7+ swift heavy ions (SHIs) …
Fractal characterization of the silicon surfaces produced by ion beam irradiation of varying fluences
Abstract Si (1 0 0) is bombarded with 200 keV Ar+ ion beam at oblique incidence with
fluences ranging from 3× 10 17 ions/cm 2 to 3× 10 18 ions/cm 2. The surface morphology of …
fluences ranging from 3× 10 17 ions/cm 2 to 3× 10 18 ions/cm 2. The surface morphology of …
Electronic excitation induced defect dynamics in HfO2 based MOS devices investigated by in-situ electrical measurements
In-situ IV and CV characterization studies were carried out to determine the device quality of
atomic layer deposited HfO 2 (2.7 nm)/SiO 2 (0.6 nm)/Si-based metal oxide semiconductor …
atomic layer deposited HfO 2 (2.7 nm)/SiO 2 (0.6 nm)/Si-based metal oxide semiconductor …
How to recognize the universal aspects of Mott criticality?
In this paper we critically discuss several examples of two-dimensional electronic systems
displaying interaction-driven metal-insulator transitions of the Mott (or Wigner–Mott) type …
displaying interaction-driven metal-insulator transitions of the Mott (or Wigner–Mott) type …
Radiation tolerance, charge trapping, and defect dynamics studies of ALD-grown Al/HfO2/Si nMOSCAPs
The radiation response, long-term performance, and reliability of HfO 2-based gate dielectric
materials play a critical role in metal oxide semiconductor (MOS) technology for space …
materials play a critical role in metal oxide semiconductor (MOS) technology for space …
Influence of annealing treatment on performance of 4H–SiC SBD irradiated by heavy ions under room temperature and low temperature
Y Li, X Gao, J Gao, Z Yang, M Gong, M Huang… - Micro and …, 2024 - Elsevier
The influence of the annealing treatment on the performance of commercial 4H–SiC
Schottky barrier diodes (SBDs) subjected to heavy ion irradiation under room temperature …
Schottky barrier diodes (SBDs) subjected to heavy ion irradiation under room temperature …
In-situ transport and microstructural evolution in GaN Schottky diodes and epilayers exposed to swift heavy ion irradiation
A systematic investigation of radiation hardness of Schottky barrier diodes and GaN epitaxial
layers is carried out by employing in-situ electrical resistivity and cross sectional …
layers is carried out by employing in-situ electrical resistivity and cross sectional …
Identification of swift heavy ion induced defects in Pt/n-GaN Schottky diodes by in-situ deep level transient spectroscopy
In-situ measurements such as deep level transient spectroscopy (DLTS) provide reliable
information for the identification of defects in electronic devices. For GaN-based devices …
information for the identification of defects in electronic devices. For GaN-based devices …