In this article, the performance of 3-D nanosheet FET (NS-FET) in inversion (INV) and
junctionless (JL) modes is demonstrated and compared at both device and circuit levels. In …

In this study, for the very first time developing of n-and p-type 3-D single-channel (SC)
FinFET and gate-all-around (GAA) Multi-Bridge-Channel FETs (MBCFET) like nanowire FET …

In this paper, multi-channel nanowire (NW) performance is significantly improved by
symmetric and asymmetric spacer length optimization. Device performance metrics …

Moore's law states that the technical innovations are being absorbed already. The device's
controllability has dramatically improved since moving from a straightforward MOSFET …

Abstract The Nanosheet FET (NS FET) has proven to be a potential candidate for sub-5-nm
nodes. For the first time, in this manuscript, the NS FET performance is demonstrated by …

Field-effect-transistor-based sensors are essential for environmental monitoring, industrial
analyte detection, medical diagnosis, etc. This letter unveiled the process variation, self …

SOI junctionless (JL) FinFETs are well-suited for future wireless communication systems;
however, they suffer from the self-heating effect (SHE), which diminishes performance at …

The self-heating effect (SHE) poses a significant obstacle for ultra-scaled devices, including
Fin Field Effect Transistors (FinFETs) designed for sub-nanometer technology. This study …

For improving thermal characteristics and on-current () in vertically stacked nanosheet field-
effect transistor (NSFET), the effect of parasitic channel height () on thermal and electrical …

In the last few years, a significant interest has been shown in 2D field effect transistors (2D
FETs) as an appropriate candidate for advanced electronics devices. This study presents a …