Electronic devices are evolving from rigid devices into flexible and stretchable structures,
enabling a seamless integration of electronics into our everyday lives. The integration of a …

We report the successful growth of high-quality GaAs1–x Sb x nanowires on monolayer
graphene/SiO2/p-Si (111) using molecular beam epitaxy (MBE) for the application of a …

During the last few years, there has been renewed interest in the monolithic integration of
gold-free, Ternary III–As Antimonide (III–As–Sb) compound semiconductor materials on …

III–V nanowires are promising building blocks for achieving superior heteroepitaxial quality.
Here, we show that growth of self-catalyzed GaAsSb nanowires on graphitic substrates can …

To exploit the promising properties of semiconductor nanowires and ensure the uniformity
required to achieve device integration, their position on the growth substrate must be …

Precise control and broad tunability of the growth parameters are essential in engineering
the optical and electrical properties of semiconductor nanowires (NWs) to make them …

Cognizing the structural characteristics of a heterointerface is significant to understand the
growth mechanism of heterostructured nanowires. Here, the structural characteristics of a …

An ultrawideband perfect absorber (UPA) is designed via a four-layer dielectric/refractory
metal structure, which can produce near-unity absorption in the midinfrared region. The …

In this work, we utilize selective area growth of GaAs (Sb):(Si) NWs using molecular beam
epitaxy in the non-VLS growth regime to develop pure zinc blende NWs with high uniformity …

In the past few years, GaAs 1-x Sb x nanowire (NW) has attracted tremendous attention for
the near-infrared photodetector (NIRPD) applications, as it covers important …