[HTML][HTML] Polarization-matching and carrier confinement in III-nitride deep-ultraviolet light-emitting diodes
The polarization-induced quantum confined Stark effect has been recognized as a
significant factor contributing to the Internal Quantum Efficiency (IQE) droop in light-emitting …
significant factor contributing to the Internal Quantum Efficiency (IQE) droop in light-emitting …
Nanoscale compositional analysis of wurtzite BAlN thin film using atom probe tomography
In this work, the local atomic level composition of BAlN films with∼ 20% B was investigated
using atom probe tomography. Dislocations and elemental clustering were confirmed along …
using atom probe tomography. Dislocations and elemental clustering were confirmed along …
The effects of low boron incorporation on the structural and optical properties of BxGa1− xN/SiC epitaxial layers
BGaN epilayers with boron contents up to 5.6% were grown on SiC substrates by metal–
organic chemical vapor deposition. The effects of boron incorporation on the structural and …
organic chemical vapor deposition. The effects of boron incorporation on the structural and …
All-BN distributed Bragg reflectors fabricated in a single MOCVD process
Abstract Distributed Bragg Reflectors (DBR) are well-established photonic structures that are
used in many photonic applications. However, most of the DBRs are based on different …
used in many photonic applications. However, most of the DBRs are based on different …
[HTML][HTML] Demonstration of MOCVD-grown BGaN with over 10% boron composition
BGaN is an emerging ultrawide bandgap semiconductor with important applications ranging
from power electronics to ultraviolet light emitters. To date, BGaN boron composition has …
from power electronics to ultraviolet light emitters. To date, BGaN boron composition has …
Low temperature photoluminescence study of AlxGa1−xN/GaN/AlxGa1−xN heterostructure nanocolumns
N AbdelAll, J ElGhoul, M Almokhtar - Journal of Materials Science …, 2023 - Springer
Al x Ga1− x N/GaN/Al x Ga1− x N/GaN/SiO2/Si (x= 0.12) heterostructure nanocolumns were
grown by plasma-assisted molecular-beam epitaxy (PA-MBE). High-resolution transmission …
grown by plasma-assisted molecular-beam epitaxy (PA-MBE). High-resolution transmission …
Ground-State Structure of Quaternary Alloys (SiC)1−x (AlN)x and (SiC)1−x (GaN)x
Despite III-nitride and silicon carbide being the materials of choice for a wide range of
applications, theoretical studies on their quaternary alloys are limited. Here, we report a …
applications, theoretical studies on their quaternary alloys are limited. Here, we report a …
Assesment of a model to calculate the refractive index of AlXGa1-XN epilayers using the multi-oscillator model simulation of the infrared reflectance
JAA Engelbrecht, EG Minnaar, EE van Dyk… - Physica B: Condensed …, 2022 - Elsevier
A formula for the calculation of the refractive index of Al X Ga 1-XN in the infrared region has
previously been proposed. In this paper, the validity of the proposed model is assessed …
previously been proposed. In this paper, the validity of the proposed model is assessed …
MOCVD Growth and Characterization of BGaN Alloys
FS AlQatari - 2023 - repository.kaust.edu.sa
III-nitride semiconductors have garnered significant attention due to their diverse
applications in the fields of optics and electronics. As GaN-based visible light-emitting …
applications in the fields of optics and electronics. As GaN-based visible light-emitting …