Recently, very thin AlAs capping layers (CLs) have been proposed as a useful tool to
increase the performance of InAs/GaAs quantum dot (QDs) devices. However, the structure …

Low-bandgap GaInNAsSb single junction solar cells incorporating a planar Au back surface
reflector for enhancing the photocurrent generation are reported. In particular, a 700 nm …

In this work, we demonstrate the beneficial effect of post-growth rapid thermal annealing
(RTA) on the performance of~ 1 eV GaAsSbN-based solar cells. Different configurations of …

We report on the fabrication of diffraction gratings for application as back contact reflectors.
The gratings are designed for thin-film solar cells incorporating absorbers with bandgap …

The effect of a Ag/Cu-based double-layer back reflector on current generation in GaInNAs
single-junction solar cell is reported. Compared to Ti/Au reflector, the use of Ag/Cu led to a …

The defect properties of InGaAsN dilute nitrides grown as sub-monolayer digital alloys
(SDAs) by molecular beam epitaxy for photovoltaic application were studied by space …

The electronic band structure of Ga (PAsN) with a few percent of nitrogen is calculated in the
whole composition range of Ga (PAs) host using density functional methods including the …

Based on a PC1D (Personal Computer One-Dimensional) simulator device, we have
investigated three solar prototypes of gallium arsenide structures labeled as SP I, SP II and …

We synthesized a silver nanoparticle/zinc oxide (Ag NP/ZnO) thin film by using spin-coating
technology. The treatment solution for Ag NP/ZnO thin film deposition contained zinc acetate …

Dilute nitrides based on GaAs constitute a family of compounds whose main characteristic is
the band-gap tunability, depending on the nitrogen content. In this work we have focussed …