Compositionally graded III-nitride alloys: Building blocks for efficient ultraviolet optoelectronics and power electronics
Wide bandgap aluminum gallium nitride (AlGaN) semiconductor alloys have established
themselves as the key materials for building ultraviolet (UV) optoelectronic and power …
themselves as the key materials for building ultraviolet (UV) optoelectronic and power …
Perspectives on UVC LED: Its progress and application
TC Hsu, YT Teng, YW Yeh, X Fan, KH Chu, SH Lin… - Photonics, 2021 - mdpi.com
High-quality epitaxial layers are directly related to internal quantum efficiency. The methods
used to design such epitaxial layers are reviewed in this article. The ultraviolet C (UVC) light …
used to design such epitaxial layers are reviewed in this article. The ultraviolet C (UVC) light …
Achieving 9.6% efficiency in 304 nm p-AlGaN UVB LED via increasing the holes injection and light reflectance
MA Khan, N Maeda, J Yun, M Jo, Y Yamada… - Scientific reports, 2022 - nature.com
Crystal growth of eco-friendly, ultrawide bandgap aluminium gallium nitride (AlGaN)
semiconductor-based ultraviolet-B (UVB) light-emitting diodes (LEDs) hold the potential to …
semiconductor-based ultraviolet-B (UVB) light-emitting diodes (LEDs) hold the potential to …
Recent advances and challenges in AlGaN-based ultra-violet light emitting diode technologies
The lighting industry undergoes a revolutionizing transformation with the introduction of III-
nitride semiconductors, and" LEDs" became a household name. The solid-state light source …
nitride semiconductors, and" LEDs" became a household name. The solid-state light source …
[HTML][HTML] Review on the progress of AlGaN-based ultraviolet light-emitting diodes
Y Chen, J Ben, F Xu, J Li, Y Chen, X Sun, D Li - Fundamental Research, 2021 - Elsevier
AlGaN-based materials have exhibited considerable potential for fabricating ultraviolet (UV)
light-emitting diodes (LEDs) owing to their direct, wide, and adjustable energy bandgap …
light-emitting diodes (LEDs) owing to their direct, wide, and adjustable energy bandgap …
Research progress of AlGaN-based deep ultraviolet light-emitting diodes
R Xu, Q Kang, Y Zhang, X Zhang, Z Zhang - Micromachines, 2023 - mdpi.com
AlGaN-based deep ultraviolet light-emitting diodes (DUV LEDs) have great application
prospects in sterilization, UV phototherapy, biological monitoring and other aspects. Due to …
prospects in sterilization, UV phototherapy, biological monitoring and other aspects. Due to …
Polarization-engineered AlGaN last quantum barrier for efficient deep-ultraviolet light-emitting diodes
AlGaN-based deep-ultraviolet light-emitting diodes (DUV LEDs) have been identified as a
prospective mercury-free UV source. However, the observation of severe electron overflow …
prospective mercury-free UV source. However, the observation of severe electron overflow …
Calculating the effect of AlGaN dielectric layers in a polarization tunnel junction on the performance of AlGaN-based deep-ultraviolet light-emitting diodes
Y Wang, Z Zhang, L Guo, Y Chen, Y Li, Z Qi, J Ben… - Nanomaterials, 2021 - mdpi.com
In this work, AlGaN-based deep-ultraviolet (DUV) light-emitting diodes (LEDs) with AlGaN as
the dielectric layers in p+-Al0. 55Ga0. 45N/AlGaN/n+-Al0. 55Ga0. 45N polarization tunnel …
the dielectric layers in p+-Al0. 55Ga0. 45N/AlGaN/n+-Al0. 55Ga0. 45N polarization tunnel …
Performance Enhancement of AlGaN-based Deep Ultraviolet Light-emitting Diodes with AlxGa1-xN Linear Descending Layers
In this work, the optical performance of AlGaN-based deep ultraviolet light-emitting diode
(DUV LED) with AlxGa1-xN linear descending layers has been investigated. The calculated …
(DUV LED) with AlxGa1-xN linear descending layers has been investigated. The calculated …
Low parasitic carrier reservoir of AlGaN-based DUV-LED via controlled-polarization step-graded superlattice electron blocking layer for high luminescence lighting
Achieving high luminescence intensity of deep-ultraviolet light-emitting diode (DUV-LED) is
generally performed through the implementation of electron blocking layer (EBL) on the …
generally performed through the implementation of electron blocking layer (EBL) on the …