RF & linearity distortion sensitivity analysis of DMG-DG-Ge pocket TFET with hetero dielectric
The incorporation of dual-metal, double-gate, germanium pocket and hetero gate dielectric
tunnel field effect transistor (DMG-DG-Ge pocket TFET) allows the conceptualization and …
tunnel field effect transistor (DMG-DG-Ge pocket TFET) allows the conceptualization and …
Linearity distortion analysis of junctionless quadruple gate MOSFETs for analog applications
This paper examines a Junctionless quadruple gate (JLQG) MOSFET for analog and
linearity distortion performance by numerically calculating transconductance and its higher …
linearity distortion performance by numerically calculating transconductance and its higher …
A common core model for junctionless nanowires and symmetric double-gate FETs
In this paper, we evidence the link between the planar and cylindrical junctionless field effect
transistors (JL-FETs) from the electrostatics and current point of view. In particular, we show …
transistors (JL-FETs) from the electrostatics and current point of view. In particular, we show …
A general and transformable model platform for emerging multi-gate MOSFETs
C Hong, J Zhou, J Huang, R Wang… - IEEE Electron …, 2017 - ieeexplore.ieee.org
The complete general solution of nonlinear 1-D undoped Poisson's equation, in both
Cartesian and cylindrical coordinates, is derived by employing a special variable …
Cartesian and cylindrical coordinates, is derived by employing a special variable …
Compact modeling of nanoscale trapezoidal FinFETs
N Fasarakis, TA Karatsori… - … on Electron Devices, 2013 - ieeexplore.ieee.org
An analytical compact model for the drain current of undoped or lightly doped nanoscale
FinFETs with trapezoidal cross section is proposed. The compact model of rectangular …
FinFETs with trapezoidal cross section is proposed. The compact model of rectangular …
Unified FinFET compact model: Modelling trapezoidal triple-gate FinFETs
A unified FinFET compact model is proposed for devices with complex fin cross-sections. It is
represented in a normalized form, where only four different model parameters are needed …
represented in a normalized form, where only four different model parameters are needed …
A simple compact model for long-channel junctionless double gate MOSFETs
F Lime, E Santana, B Iñiguez - Solid-State Electronics, 2013 - Elsevier
This paper presents a simple explicit compact model for the drain current of long channel
symmetrical junctionless Double Gate MOSFETs. Our approach leads to very simple …
symmetrical junctionless Double Gate MOSFETs. Our approach leads to very simple …
Analysis for Potentail Distribution of Asymmetric Double Gate MOSFET Using Series Function
H Jung - Journal of the Korea Institute of Information and …, 2013 - koreascience.kr
This paper has presented the potential distribution for asymmetric double gate (DG)
MOSFET, and sloved Poisson equation to obtain the analytical solution of potential …
MOSFET, and sloved Poisson equation to obtain the analytical solution of potential …
Potential modeling and performance analysis of junction-less quadruple gate MOSFETs for analog and RF applications
AS Rawat, SK Gupta - Microelectronics journal, 2017 - Elsevier
In this paper, a quasi-3-D analytical model for Junction-less quadruple MOSFET is
presented. The model is developed based on an equivalent number of gates by solving two …
presented. The model is developed based on an equivalent number of gates by solving two …
Impact of elliptical cross-section on the propagation delay of multi-channel gate-all-around MOSFET based inverters
S Kumar, S Jha - Microelectronics Journal, 2013 - Elsevier
Abstract Multi-channel (MC) gate-all-around (GAA) metal-oxide-semiconductor field-effect
transistor (MOSFET) is one of the promising candidates for the next-generation high …
transistor (MOSFET) is one of the promising candidates for the next-generation high …