Design and comparison of a 10-kW interleaved boost converter for PV application using Si and SiC devices
Grid-connected photovoltaic (PV) inverters have a dc/dc converter connected to the PV for
executing the maximum power point tracking. The design of an interleaved boost converter …
executing the maximum power point tracking. The design of an interleaved boost converter …
Modeling of a buck converter with a SiC JFET to predict EMC conducted emissions
E Rondon-Pinilla, F Morel, C Vollaire… - IEEE Transactions on …, 2013 - ieeexplore.ieee.org
The reduced switching times of silicon carbide (SiC) components compared to Si
components in similar conditions are a great advantage from the point of view of efficiency …
components in similar conditions are a great advantage from the point of view of efficiency …
EMI comparison between Si and SiC technology in a boost converter
P Bogónez-Franco, JB Sendra - International Symposium on …, 2012 - ieeexplore.ieee.org
In this paper we present a comparison of the EMI generated by a dc-dc boost converter,
using silicon (Si) or silicon-carbide (SiC) diodes and/or MOSFET. EMI was compared using …
using silicon (Si) or silicon-carbide (SiC) diodes and/or MOSFET. EMI was compared using …
Design, implementation, and validation of electro-thermal simulation for SiC MOSFETs in power electronic systems
Y Xu, CNM Ho, A Ghosh… - IEEE Transactions on …, 2021 - ieeexplore.ieee.org
Silicon carbide (SiC) mosfets are getting popular in high-frequency power electronic (PE)
applications. More and more concerns for system efficiency and reliability are growing due …
applications. More and more concerns for system efficiency and reliability are growing due …
High-temperature hardware: Development of a 10-kW high-temperature, high-power-density three-phase ac-dc-ac SiC converter
This article presents the development and experimental performance of a 10-W, all-silicon
carbide (SiC), 250° C junction temperature, high-powerdensity, three-phase ac-dc-ac …
carbide (SiC), 250° C junction temperature, high-powerdensity, three-phase ac-dc-ac …
A High Density 250 Junction Temperature SiC Power Module Development
A high temperature wirebond-packaged phase-leg power module was designed,
developed, and tested. Details of the layout, gate drive, and cooling system designs are …
developed, and tested. Details of the layout, gate drive, and cooling system designs are …
Development of High‐Power Density Interleaved dc/dc Converter with SiC Devices
T Kitamura, M Yamada, S Harada… - … Engineering in Japan, 2016 - Wiley Online Library
We developed an interleaved dc/dc converter with SiC devices. We applied full‐SiC
modules including MOSFETs and SBDs to the interleaved dc/dc converter to achieve a high …
modules including MOSFETs and SBDs to the interleaved dc/dc converter to achieve a high …
Conception de convertisseurs électroniques de puissance à faible impact électromagnétique intégrant de nouvelles technologies d'interrupteurs à semi-conducteurs
E Rondon-Pinilla - 2014 - theses.hal.science
Actuellement, le développement de semiconducteurs et la demande croissante de
convertisseurs en électronique de puissance dans les différents domaines de l'énergie …
convertisseurs en électronique de puissance dans les différents domaines de l'énergie …
SiC full-bridge grid-tied inverter with ZVS-switching
Although SiC MOSFET has significant improvements on switching performance compared
with traditional Si power devices, the dynamic loss of the converter rises with the increase of …
with traditional Si power devices, the dynamic loss of the converter rises with the increase of …
A 2 kW Gallium Nitride based switched capacitor three-port inverter
This paper presents a single phase, multilevel, three-port, switched capacitor inverter based
on Gallium Nitride (GaN) devices from Transphorm. The features of this inverter include one …
on Gallium Nitride (GaN) devices from Transphorm. The features of this inverter include one …