Fully integrated CMOS power amplifiers (PAs) with parallel power-combining transformer
are presented. For the high power CMOS PA design, two types of transformers, series …

A fully integrated 5.8 GHz Class AB linear power amplifier (PA) in a standard 90 nm CMOS
process using thin oxide transistors utilizes a novel on-chip transformer power combining …

This paper presents a wideband transformer-coupled CMOS power amplifier (PA). On-chip
transmission-line transformers are used as key components of matching networks at output …

This article presents the design, characterization, and modeling for the novel 3-D
transformer structures based on the in-house developed 3-D integrated circuit (3-D IC) via …

A reduction is achieved in the primary-side input impedance of a transformer (voltage
transformer) as an output matching circuit without involving a reduction in Q-factor. An RF …

Abstract Systems and methods are provided for discrete resizing of power devices. The
systems and methods can include a plurality of unit power amplifiers arranged in parallel …

This paper presents a V-band Doherty power amplifier (PA) which is implemented in a
standard 65-nm CMOS technology. The voltage combination technique is used to realize the …

This paper presents a new approach to increase the output power and to enhance the drain
efficiency of Direct Digital RF Modulators (DDRM). Two differential four-phase DDRMs are …

This paper gives an overview of several design issues for CMOS Power Amplifiers (PA) for
wireless and mobile communications. The challenges, faced by the RF PA designer, and the …

This paper presents a fully integrated adaptive multiband multimode switching-mode power
amplifier (SMPA) in CMOS technology. The power amplifier (PA) module, consisting of input …