Phase separation is an intriguing phenomenon often found in III–V nanostructures, but its
effect on the atomic and electronic structures of III–V nanomaterials is still not fully …

Hexagonal group IV materials like silicon and germanium are expected to display
remarkable optoelectronic properties for future development of photonic technologies …

Ex situ characterization techniques in molecular beam epitaxy (MBE) have inherent
limitations, such as being prone to sample contamination and unstable surfaces during …

When semiconducting nanowires are grown by vapor–liquid–solid mechanism using gold
as catalyst, the first stages, ie, gold deposition and subsequent annealing, are of prime …

Semiconductor nanowires play a very important role in optoelectronic devices due to their
excellent photoelectric properties. However, the intermixing of zinc blende and wurtzite …

The optoelectronic properties of a semiconductor are determined by the combination of its
elemental composition and the crystal structure. The vapor-liquid-solid nanowire growth …

Nanowire heterostructures of the oxide (shell)–semiconducting (core) type are of interest for
various applications in energy harvesting, such as electrodes for photocatalysis and in …

Ultralong GaAs nanowires were grown by molecular beam epitaxy using the vapor–liquid–
solid method. In this ultralong regime we show the existence of two features concerning the …

A process sequence enabling the large-area fabrication of nanopillar-patterned
semiconductor templates for selective-area heteroepitaxy is developed. Herein, the …

Nanowires (NWs) offer unique opportunities for tuning the properties of III–V semiconductors
by simultaneously controlling their nanoscale dimensions and switching their crystal phase …