Electric‐field‐controlled antiferromagnetic spintronic devices

H Yan, Z Feng, P Qin, X Zhou, H Guo… - Advanced …, 2020 - Wiley Online Library
In recent years, the field of antiferromagnetic spintronics has been substantially advanced.
Electric‐field control is a promising approach for achieving ultralow power spintronic devices …

Room-temperature magnetoresistance in an all-antiferromagnetic tunnel junction

P Qin, H Yan, X Wang, H Chen, Z Meng, J Dong, M Zhu… - Nature, 2023 - nature.com
Abstract Antiferromagnetic spintronics,,,,,,,,,,,,,,–is a rapidly growing field in condensed-
matter physics and information technology with potential applications for high-density and …

Antiferromagnetic piezospintronics

Z Liu, Z Feng, H Yan, X Wang, X Zhou… - Advanced Electronic …, 2019 - Wiley Online Library
Antiferromagnets naturally exhibit three obvious advantages over ferromagnets for memory
device applications: insensitivity to external magnetic fields, much faster spin dynamics (≈ …

A piezoelectric, strain-controlled antiferromagnetic memory insensitive to magnetic fields

H Yan, Z Feng, S Shang, X Wang, Z Hu, J Wang… - Nature …, 2019 - nature.com
Spintronic devices based on antiferromagnetic (AFM) materials hold the promise of fast
switching speeds and robustness against magnetic fields,–. Different device concepts have …

Electrical manipulation of the magnetic order in antiferromagnetic PtMn pillars

J Shi, V Lopez-Dominguez, F Garesci, C Wang… - Nature …, 2020 - nature.com
Antiferromagnets are magnetically ordered materials without a macroscopic magnetization.
As a result, they could be of use in the development of memory devices because data …

Noncollinear spintronics and electric-field control: a review

PX Qin, H Yan, XN Wang, ZX Feng, HX Guo, XR Zhou… - Rare Metals, 2020 - Springer
Our world is composed of various materials with different structures, where spin structures
have been playing a pivotal role in spintronic devices of the contemporary information …

Experimental progress on the emergent infinite-layer Ni-based superconductors

X Zhou, P Qin, Z Feng, H Yan, X Wang, H Chen… - Materials Today, 2022 - Elsevier
The emergence of the infinite-layer superconducting nickelate thin films marks the Ni age of
superconductivity, which has excited a huge surge of studies since the first report in August …

Electric‐Field Control of Magnetic Order: From FeRh to Topological Antiferromagnetic Spintronics

Z Feng, H Yan, Z Liu - Advanced Electronic Materials, 2019 - Wiley Online Library
Using an electric field instead of an electric current (or a magnetic field) to tailor the
electronic properties of magnetic materials is promising for realizing ultralow‐energy …

Integration of the noncollinear antiferromagnetic metal Mn3Sn onto ferroelectric oxides for electric-field control

X Wang, Z Feng, P Qin, H Yan, X Zhou, H Guo, Z Leng… - Acta Materialia, 2019 - Elsevier
Noncollinear antiferromagnetic materials have received dramatically increasing attention in
the field of spintronics as their exotic topological features such as the Berry-curvature …

[HTML][HTML] Electrically reversible cracks in an intermetallic film controlled by an electric field

ZQ Liu, JH Liu, MD Biegalski, JM Hu, SL Shang… - Nature …, 2018 - nature.com
Cracks in solid-state materials are typically irreversible. Here we report electrically reversible
opening and closing of nanoscale cracks in an intermetallic thin film grown on a ferroelectric …