Toward attojoule switching energy in logic transistors
Advances in the theory of semiconductors in the 1930s in addition to the purification of
germanium and silicon crystals in the 1940s enabled the point-contact junction transistor in …
germanium and silicon crystals in the 1940s enabled the point-contact junction transistor in …
2D materials for future heterogeneous electronics
Graphene and two-dimensional materials (2DM) remain an active field of research in
science and engineering over 15 years after the first reports of 2DM. The vast amount of …
science and engineering over 15 years after the first reports of 2DM. The vast amount of …
Monolithic 3D integration of back-end compatible 2D material FET on Si FinFET
SX Guan, TH Yang, CH Yang, CJ Hong… - npj 2D Materials and …, 2023 - nature.com
The performance enhancement of integrated circuits relying on dimension scaling (ie,
following Moore's Law) is more and more challenging owing to the physical limit of Si …
following Moore's Law) is more and more challenging owing to the physical limit of Si …
Nanoscale self-assembly: concepts, applications and challenges
EV Amadi, A Venkataraman, C Papadopoulos - Nanotechnology, 2022 - iopscience.iop.org
Self-assembly offers unique possibilities for fabricating nanostructures, with different
morphologies and properties, typically from vapour or liquid phase precursors. Molecular …
morphologies and properties, typically from vapour or liquid phase precursors. Molecular …
New structure transistors for advanced technology node CMOS ICs
Q Zhang, Y Zhang, Y Luo, H Yin - National Science Review, 2024 - academic.oup.com
Over recent decades, advancements in complementary metal-oxide-semiconductor
integrated circuits (ICs) have mainly relied on structural innovations in transistors. From …
integrated circuits (ICs) have mainly relied on structural innovations in transistors. From …
Two-dimensional semiconductors and transistors for future integrated circuits
L Yin, R Cheng, J Ding, J Jiang, Y Hou, X Feng… - ACS …, 2024 - ACS Publications
Silicon transistors are approaching their physical limit, calling for the emergence of a
technological revolution. As the acknowledged ultimate version of transistor channels, 2D …
technological revolution. As the acknowledged ultimate version of transistor channels, 2D …
Celebrating 75 years of the transistor a look at the evolution of Moore's law innovation
AB Kelleher - 2022 International Electron Devices Meeting …, 2022 - ieeexplore.ieee.org
For 75 years, transistor and integrated circuit (IC) innovations have primarily served as the
fundamental engine of scaling for electronic devices. Moore's Law, predicting functional …
fundamental engine of scaling for electronic devices. Moore's Law, predicting functional …
Performance analysis on complementary FET (CFET) relative to standard CMOS with nanosheet FET
For the first time, by using 3-D TCAD, the advantage of using complementary FET (CFET),
which has vertically stacked nanosheet nFET and pFET with shared gate, is compared to …
which has vertically stacked nanosheet nFET and pFET with shared gate, is compared to …
Layout optimization of complementary FET 6T-SRAM cell based on a universal methodology using sensitivity with respect to parasitic-and-values
Y Luo, L Cao, Q Zhang, Y Cao, Z Zhang… - … on Electron Devices, 2022 - ieeexplore.ieee.org
Complementary FET (CFET) is a promising booster for further area reductions in static
random-access memory (SRAM) cells. However, the performance degrading by a series of …
random-access memory (SRAM) cells. However, the performance degrading by a series of …