The realization of quantum sensors using spin defects in semiconductors requires a
thorough understanding of the physical properties of the defects in the proximity of surfaces …

Silicon-carbide (SiC) is a promising platform for long-distance quantum information
transmission via single photons, offering long spin coherence qubits, excellent electronic …

Solid‐state single‐photon sources in the infrared region are crucial for advancing quantum
technologies, in particular long‐distance fiber or on‐chip quantum communication, quantum …

Solid-state qubits with a photonic interface is very promising for quantum networks. Color
centers in silicon carbide have shown excellent optical and spin coherence, even when …

The deterministic generation of individual color centers with defined orientations or types in
solid-state systems is paramount for advancements in quantum technologies. Silicon …

Triangular cross-section silicon carbide (SiC) photonic devices have been studied as an
efficient and scalable route for integration of color centers into quantum hardware. In this …

Silicon carbide is among the leading quantum information material platforms due to the long
spin coherence and single-photon emitting properties of its color center defects. Applications …

Silicon carbide (SiC) integrated photonics is advancing rapidly, promising to overcome the
limitations of other integrated photonics platforms and enable new quantum devices. This …

The diamond nitrogen vacancy (NV) center remains an ever-increasing topic of interest. At
present, it is considered an ideal example of a solid-state qubit applicable in quantum …

Defects create key functionalities in semiconductor devices by contributing with charge
carriers or assisting optical transitions. On the other hand, defects may cause severe …