The improvement mechanism of sputtered AlN films by high temperature annealing in
nitrogen ambient has been investigated. Sputtered AlN films were annealed at 1100–1700° …

Wurtzite AlN films were deposited by an RF reactive sputtering technique under various
nitrogen concentrations at low temperature (350° C). The evolution of preferred orientation …

Wurtzite aluminum nitride (2H–AlN) films were deposited on (100) silicon wafers by radio
frequency (RF) magnetron reactive sputtering under various deposition conditions. The …

Using X-ray diffraction analysis, atomic force microscopy, IR and UV spectroscopy, the
properties of thin aluminium nitride films (< 200 nm) that were obtained by ion-plasma …

Wurtzite AlN (2H-AlN) films were deposited on p-type Si (100) by RF planar magnetron
reactive sputtering under various pressures at a relatively low temperature (350° C). X-Ray …

Biosensors based on AlN bulk acoustic wave resonators require shear mode operation to
avoid acoustic losses upon analysing liquid samples. To generate shear modes, the …

The structure and stability of a polarity inversion boundary in sputtered AlN films with face-to-
face annealing are investigated on the basis of scanning transmission electron microscop …

Wurtzite AlN films were deposited by RF reactive sputtering technique in argon and nitrogen
gas mixtures. The evolution of preferred orientation and morphology of AlN films with the …

Aluminum nitride (AlN) films were deposited using pulsed laser deposition (PLD) onto
sapphire (0001) substrates with varying processing conditions (temperature, pressure, and …

Aluminum nitride films (AlN) were produced by Nd: YAG pulsed laser (PLD), with repetition
rate of 10 Hz. The laser interaction on Al target under nitrogen gas atmosphere generates …