Strain engineering in semiconducting two-dimensional crystals

R Roldán, A Castellanos-Gomez… - Journal of Physics …, 2015 - iopscience.iop.org
One of the fascinating properties of the new families of two-dimensional crystals is their high
stretchability and the possibility to use external strain to manipulate, in a controlled manner …

Strain effect on circularly polarized electroluminescence in transition metal dichalcogenides

S Wang, MS Ukhtary, R Saito - Physical Review Research, 2020 - APS
Strain effect on circularly polarized electroluminescence (EL) is theoretically analyzed for a
pin junction of transition metal dichalcogenides. The electrically controllable circularly …

Single-layer metal halides MX 2 (X= Cl, Br, I): stability and tunable magnetism from first principles and Monte Carlo simulations

VV Kulish, W Huang - Journal of Materials Chemistry C, 2017 - pubs.rsc.org
Based on first-principles calculations, we investigate a novel class of 2D materials–MX2
metal dihalides (X= Cl, Br, I). Our results show that single-layer dihalides are energetically …

Tuning surface properties of low dimensional materials via strain engineering

S Yang, F Liu, C Wu, S Yang - Small, 2016 - Wiley Online Library
The promising and versatile applications of low dimensional materials are largely due to
their surface properties, which along with their underlying electronic structures have been …

Oxygen ion diffusivity in strained yttria stabilized zirconia: where is the fastest strain?

A Kushima, B Yildiz - Journal of Materials Chemistry, 2010 - pubs.rsc.org
We present the mechanism and the extent of increase in the oxygen anion diffusivity in
Y2O3 stabilized ZrO2 (YSZ) under biaxial lattice strain. The oxygen vacancy migration paths …

Strain modulation in crumpled Si nanomembranes: Light detection beyond the Si absorption limit

AK Katiyar, BJ Kim, G Lee, Y Kim, JS Kim, JM Kim… - Science …, 2024 - science.org
Although Si is extensively used in micro-nano electronics, its inherent optical absorption
cutoff at 1100-nm limits its photonic and optoelectronic applications in visible to partly near …

Breaking the absorption limit of Si toward SWIR wavelength range via strain engineering

AK Katiyar, KY Thai, WS Yun, JD Lee, JH Ahn - Science advances, 2020 - science.org
Silicon has been widely used in the microelectronics industry. However, its photonic
applications are restricted to visible and partial near-infrared spectral range owing to its …

Extreme electronic bandgap modification in laser-crystallized silicon optical fibres

N Healy, S Mailis, NM Bulgakova, PJA Sazio, TD Day… - Nature materials, 2014 - nature.com
For decades now, silicon has been the workhorse of the microelectronics revolution and a
key enabler of the information age. Owing to its excellent optical properties in the near-and …

Strain induced bandgap and refractive index variation of silicon

J Cai, Y Ishikawa, K Wada - Optics express, 2013 - opg.optica.org
We present a study of the influence of high strain on the bandgap and the refractive index of
silicon. The results of photoluminescence show that with the strain applied, the silicon …

Reversible strain-induced electron–hole recombination in silicon nanowires observed with femtosecond pump–probe microscopy

EM Grumstrup, MM Gabriel, CW Pinion, JK Parker… - Nano …, 2014 - ACS Publications
Strain-induced changes to the electronic structure of nanoscale materials provide a
promising avenue for expanding the optoelectronic functionality of semiconductor …