Strain engineering in semiconducting two-dimensional crystals
R Roldán, A Castellanos-Gomez… - Journal of Physics …, 2015 - iopscience.iop.org
One of the fascinating properties of the new families of two-dimensional crystals is their high
stretchability and the possibility to use external strain to manipulate, in a controlled manner …
stretchability and the possibility to use external strain to manipulate, in a controlled manner …
Strain effect on circularly polarized electroluminescence in transition metal dichalcogenides
S Wang, MS Ukhtary, R Saito - Physical Review Research, 2020 - APS
Strain effect on circularly polarized electroluminescence (EL) is theoretically analyzed for a
pin junction of transition metal dichalcogenides. The electrically controllable circularly …
pin junction of transition metal dichalcogenides. The electrically controllable circularly …
Single-layer metal halides MX 2 (X= Cl, Br, I): stability and tunable magnetism from first principles and Monte Carlo simulations
VV Kulish, W Huang - Journal of Materials Chemistry C, 2017 - pubs.rsc.org
Based on first-principles calculations, we investigate a novel class of 2D materials–MX2
metal dihalides (X= Cl, Br, I). Our results show that single-layer dihalides are energetically …
metal dihalides (X= Cl, Br, I). Our results show that single-layer dihalides are energetically …
Tuning surface properties of low dimensional materials via strain engineering
The promising and versatile applications of low dimensional materials are largely due to
their surface properties, which along with their underlying electronic structures have been …
their surface properties, which along with their underlying electronic structures have been …
Oxygen ion diffusivity in strained yttria stabilized zirconia: where is the fastest strain?
We present the mechanism and the extent of increase in the oxygen anion diffusivity in
Y2O3 stabilized ZrO2 (YSZ) under biaxial lattice strain. The oxygen vacancy migration paths …
Y2O3 stabilized ZrO2 (YSZ) under biaxial lattice strain. The oxygen vacancy migration paths …
Strain modulation in crumpled Si nanomembranes: Light detection beyond the Si absorption limit
Although Si is extensively used in micro-nano electronics, its inherent optical absorption
cutoff at 1100-nm limits its photonic and optoelectronic applications in visible to partly near …
cutoff at 1100-nm limits its photonic and optoelectronic applications in visible to partly near …
Breaking the absorption limit of Si toward SWIR wavelength range via strain engineering
Silicon has been widely used in the microelectronics industry. However, its photonic
applications are restricted to visible and partial near-infrared spectral range owing to its …
applications are restricted to visible and partial near-infrared spectral range owing to its …
Extreme electronic bandgap modification in laser-crystallized silicon optical fibres
N Healy, S Mailis, NM Bulgakova, PJA Sazio, TD Day… - Nature materials, 2014 - nature.com
For decades now, silicon has been the workhorse of the microelectronics revolution and a
key enabler of the information age. Owing to its excellent optical properties in the near-and …
key enabler of the information age. Owing to its excellent optical properties in the near-and …
Strain induced bandgap and refractive index variation of silicon
J Cai, Y Ishikawa, K Wada - Optics express, 2013 - opg.optica.org
We present a study of the influence of high strain on the bandgap and the refractive index of
silicon. The results of photoluminescence show that with the strain applied, the silicon …
silicon. The results of photoluminescence show that with the strain applied, the silicon …
Reversible strain-induced electron–hole recombination in silicon nanowires observed with femtosecond pump–probe microscopy
EM Grumstrup, MM Gabriel, CW Pinion, JK Parker… - Nano …, 2014 - ACS Publications
Strain-induced changes to the electronic structure of nanoscale materials provide a
promising avenue for expanding the optoelectronic functionality of semiconductor …
promising avenue for expanding the optoelectronic functionality of semiconductor …