The rapid spread of the novel coronavirus disease (COVID-19) and emergence of different
variants worldwide have caused a pandemic. With the sudden outbreak of this virus …

Silicon based power devices have limited capabilities in terms of voltage handling and
switching speeds, leading to rampant research in the field of next generation wide bandgap …

The present Tutorial provides a description of the growth of bulk β-Ga 2 O 3 single crystals
by the Czochralski method with a focus on the critical growth aspects. In particular, it details …

Ultrawide bandgap β-gallium oxide (β-Ga2O3) is emerging as a viable candidate for next-
generation high-power electronics, including Schottky barrier diodes (SBDs) and field-effect …

This work reports a 3D-printed PVDF-TrFE piezoelectric film (PF) coated with one pair of
dislocated interdigital electrode (ID) to produce multiple, alternatively tilt-polarized regions in …

Ga2O3 has emerged as a promising ultrawide bandgap semiconductor for numerous device
applications owing to its excellent material properties. In this paper, we present a …

Two inch diameter, highly conducting (Si-doped) bulk β-Ga 2 O 3 single crystals with the
cylinder length up to one inch were grown by the Czochralski method. The obtained crystals …

Ion implantation induced phase transformation and the crystal structure of a series of ion
implanted β-Ga 2 O 3 samples were studied using electron diffraction, high resolution …

We report on the growth of monoclinic β-and orthorhombic κ-phase Ga 2 O 3 thin films using
liquid-injection metal-organic chemical vapor deposition on highly thermally conductive 4H …

Abstract The cylindrical Sn: β-Ga 2 O 3 crystal with high crystalline quality was successfully
designed and grown by the innovative edge-defined film-fed growth (EFG) method equipped …