Materials quest for advanced interconnect metallization in integrated circuits
Integrated circuits (ICs) are challenged to deliver historically anticipated performance
improvements while increasing the cost and complexity of the technology with each …
improvements while increasing the cost and complexity of the technology with each …
[HTML][HTML] The search for the most conductive metal for narrow interconnect lines
D Gall - Journal of Applied Physics, 2020 - pubs.aip.org
A major challenge for the continued downscaling of integrated circuits is the resistivity
increase of Cu interconnect lines with decreasing dimensions. Alternative metals have the …
increase of Cu interconnect lines with decreasing dimensions. Alternative metals have the …
Accounting for the resistivity contribution of grain boundaries in metals: critical analysis of reported experimental and theoretical data for Ni and Cu
I Bakonyi - The European Physical Journal Plus, 2021 - epjplus.epj.org
In the present paper, reported literature data on the grain-size dependence of resistivity of Ni
and Cu are critically evaluated by two conceptually different methods. One is the …
and Cu are critically evaluated by two conceptually different methods. One is the …
Understanding grain boundary electrical resistivity in Cu: the effect of boundary structure
Grain boundaries (GBs) in metals usually increase electrical resistivity due to their distinct
atomic arrangement compared to the grain interior. While the GB structure has a crucial …
atomic arrangement compared to the grain interior. While the GB structure has a crucial …
Large discrete resistance jump at grain boundary in copper nanowire
Copper is the current interconnect metal of choice in integrated circuits. As interconnect
dimensions decrease, the resistivity of copper increases dramatically because of electron …
dimensions decrease, the resistivity of copper increases dramatically because of electron …
Calculated resistances of single grain boundaries in copper
M César, D Liu, D Gall, H Guo - Physical Review Applied, 2014 - APS
The resistance of copper grain boundaries (GBs) is calculated systematically through a full
atomistic quantum approach. A set of twin GBs, including the coherent twin GB, is generated …
atomistic quantum approach. A set of twin GBs, including the coherent twin GB, is generated …
First-principles prediction of electron grain boundary scattering in fcc metals
The electron reflection probability r at symmetric twin boundaries Σ3, Σ5, Σ9, and Σ11 is
predicted from first principles for the eight most conductive face-centered cubic (fcc) metals. r …
predicted from first principles for the eight most conductive face-centered cubic (fcc) metals. r …
Approaches to measure the resistivity of grain boundaries in metals with high sensitivity and spatial resolution: a case study employing Cu
It is well-known that grain boundaries (GBs) increase the electrical resistivity of metals due to
their enhanced electron scattering. The resistivity values of GBs are determined by their …
their enhanced electron scattering. The resistivity values of GBs are determined by their …
Reducing grain-boundary resistivity of copper nanowires by doping
M César, D Gall, H Guo - Physical Review Applied, 2016 - APS
The resistance of doped single grain boundaries (GBs) in copper is calculated from first
principles and systematically compared to its pure single GB equivalent. As a first step, a …
principles and systematically compared to its pure single GB equivalent. As a first step, a …
Characterization of semiconductor surface conductivity by using microscopic four-point probe technique
JC Li, Y Wang, DC Ba - Physics Procedia, 2012 - Elsevier
Four-point probe characterization is a standard method for studying the electrical properties
of solids and thin films. The probe spacing in four-point probe technique has to be reduced …
of solids and thin films. The probe spacing in four-point probe technique has to be reduced …