ABSTRACT Gallium oxide (Ga2O3) is an emerging wide bandgap semiconductor that has
attracted a large amount of interest due to its ultra-large bandgap of 4.8 eV, a high …

The group‐III sesquioxides possess material properties that render them interesting for
applications such as high‐power rectifiers and transistors, solar‐blind UV detectors and inter …

We report the results of a comprehensive study on the structural, electronic, and optical
properties of Ga 2 O 3 in its ambient, monoclinic (β) and high-pressure, hexagonal (α) …

By systematically changing growth parameters, the growth of β-(Al x Ga 1− x) 2 O 3/Ga 2 O 3
(010) heterostructures by plasma-assisted molecular beam epitaxy was optimized. Through …

(In x Ga 1− x) 2 O 3 alloys show promise as transparent conducting oxides. Using hybrid
density functional calculations, band gaps, formation enthalpies, and structural parameters …

Abstract β-Al 2x Ga 2-2x O 3 alloy thin films were successfully grown on (100)-oriented β-Ga
2 O 3 single-crystal substrates by plasma-assisted molecular beam epitaxy. The films were …

This work reports the fabrication of high performance solar‐blind deep‐UV photodetectors
using (InxGa1− x) 2O3 thin films grown on Al2O3 (0001) substrates. The In contents in …

Artificial senses like electronic nose, which ameliorates the problem of poor selectivity from
single gas sensor, have elicited keen research interest to monitor hazardous gases. Herein …

The design of appropriate composite materials with unique surface structures is an important
strategy to achieve ideal chemical gas sensing. In this paper, efficient and selective …

A new transparent conducting oxide (TCO), which can be expressed as Ga 3− x In 5+ x Sn 2
O 16; 0.2⩽ x⩽ 1.6, has been identified. The equilibrium phase relationships of this new …