GaN technology is not only gaining traction in power and RF electronics but is also rapidly
expanding into other application areas including digital and quantum computing electronics …

A GaN complementary field-effect transistor (FET) inverter monolithically integrated with
power gate-injection high-electron-mobility transistors (HEMTs) was realized on a Si …

This letter demonstrates Tungsten (W)-gated-channel GaN/AlGaN heterostructure field effect
transistors on a GaN-on-Si wafer grown by metal organic chemical vapor deposition …

We demonstrate threshold switching behaviors with working temperatures up to 500° C
based on GaN vertical pn diodes, and these devices survived a passive test in a simulated …

In response to the recent surge of interest in p-channel GaN devices for the development of
GaN complementary technology integrated circuits (ICs), a comprehensive model is …

In this study, a new robust ohmic contact preparation process for GaN p-FETs application is
developed on p-GaN/AlGaN/GaN, which excluded the commonly used descum step. A …

Gallium nitride (GaN) integrated circuits (ICs) are receiving increasing attention because
they offer compactness, reduced parasitics, and higher performance compared to discrete …

This work investigates the robustness of AlGaN/GaN multimetal gated (MMG) HEMT
architecture for third-order transconductance (g m3) optimization and linearity improvement …

In this article, wafer-scale gallium nitride (GaN)-Si (100) monolithic integration material was
achieved by transfer printing and self-aligned etching technology. A monolithic …

It is necessary to achieve current matching for GaN-based CMOS-like inverters. However,
due to the low hole mobility of GaN p-FET devices, the weak output capacity of GaN p-FET …