[图书][B] Metalorganic vapor phase epitaxy (MOVPE): Growth, materials properties, and applications
S Irvine, P Capper - 2019 - books.google.com
Systematically discusses the growth method, material properties, and applications for key
semiconductor materials MOVPE is a chemical vapor deposition technique that produces …
semiconductor materials MOVPE is a chemical vapor deposition technique that produces …
InGaAs FinFETs directly integrated on silicon by selective growth in oxide cavities
III-V semiconductors are being considered as promising candidates to replace silicon
channel for low-power logic and RF applications in advanced technology nodes. InGaAs is …
channel for low-power logic and RF applications in advanced technology nodes. InGaAs is …
InGaAs FinFETs 3-D sequentially integrated on FDSOI Si CMOS with record performance
C Convertino, CB Zota, D Caimi… - IEEE Journal of the …, 2019 - ieeexplore.ieee.org
In this paper, we demonstrate InGaAs FinFETs 3-D sequentially (3DS) integrated on top of a
fully depleted silicon-on-insulator CMOS. Top layer III-V FETs are fabricated using a Si …
fully depleted silicon-on-insulator CMOS. Top layer III-V FETs are fabricated using a Si …
In0.53Ga0.47As FinFET and GAA-FET With Remote-Plasma Treatment
QH Luc, KS Yang, JW Lin, CC Chang… - IEEE Electron …, 2018 - ieeexplore.ieee.org
This letter presents a remote NH 3/N 2 plasma treatment after gate oxide deposition for
improving the electrical characteristics and the reliability of In 0.53 Ga 0.47 As FinFET. The …
improving the electrical characteristics and the reliability of In 0.53 Ga 0.47 As FinFET. The …
Nitrogen-Passivated (010) In0.53Ga0.47As FinFETs With High Peak gm and Reduced Leakage Current
In this article, InGaAs FinFETs using (010) orientation channel and nitrogen post remote
plasma (RP) treatment have been fabricated. This device exhibits a peak transconductance …
plasma (RP) treatment have been fabricated. This device exhibits a peak transconductance …
A new technique for mobility extraction in MOSFETs in the presence of prominent gate oxide trapping: Application to InGaAs MOSFETs
In the presence of prominent gate oxide trapping, the conventional technique for channel
mobility extraction in MOSFETs based on IV/CV measurements becomes inadequate. This is …
mobility extraction in MOSFETs based on IV/CV measurements becomes inadequate. This is …
Demonstration of 3-D SRAM cell by 3-D monolithic integration of InGaAs n-FinFETs on FDSOI CMOS with interlayer contacts
V Deshpande, H Hahn, E O'Connor… - … on Electron Devices, 2017 - ieeexplore.ieee.org
In this paper, we demonstrate, for the first time, 3-D Monolithic integration of short-channel
replacement metal gate InGaAs n-FinFETs on fully-depleted silicon-on-insulator CMOS, with …
replacement metal gate InGaAs n-FinFETs on fully-depleted silicon-on-insulator CMOS, with …
Static and low frequency noise characterization of InGaAs MOSFETs and FinFETs on insulator
TA Karatsori, K Bennamane… - 2018 48th European …, 2018 - ieeexplore.ieee.org
A detailed static and low frequency noise characterization of InGaAs/OI MOSFETs has been
performed. The mobility in long channel devices is very good for such 20nm thin film III-Vvv …
performed. The mobility in long channel devices is very good for such 20nm thin film III-Vvv …
A 3-D potential model to assess DC characteristics of Si FinFETs
The potential distribution inside the channel of a Si FinFET is usually determined by a 2-D
Poisson equation which does not truly describe its variation. Due to the 3-D structure of a …
Poisson equation which does not truly describe its variation. Due to the 3-D structure of a …
High-performance InGaAs FinFETs with raised source/drain extensions
In this letter we report on high-performance InGaAs FinFETs with optimized on-off trade-off.
The InGaAs FinFETs are fabricated on silicon substrate using a CMOS-compatible …
The InGaAs FinFETs are fabricated on silicon substrate using a CMOS-compatible …