Molecular beam epitaxy growth of GaN, AlN and InN
X Wang, A Yoshikawa - Progress in crystal growth and characterization of …, 2004 - Elsevier
III-Nitrides receive much research attention and obtain significant development due to their
wide applications in light emitting diodes, laser diodes, ultraviolet detectors, solar cells, field …
wide applications in light emitting diodes, laser diodes, ultraviolet detectors, solar cells, field …
When group-III nitrides go infrared: New properties and perspectives
J Wu - Journal of applied physics, 2009 - pubs.aip.org
Wide-band-gap GaN and Ga-rich InGaN alloys, with energy gaps covering the blue and
near-ultraviolet parts of the electromagnetic spectrum, are one group of the dominant …
near-ultraviolet parts of the electromagnetic spectrum, are one group of the dominant …
[图书][B] Handbook of nitride semiconductors and devices, Materials Properties, Physics and Growth
H Morkoį - 2009 - books.google.com
The three volumes of this handbook treat the fundamentals, technology and nanotechnology
of nitride semiconductors with an extraordinary clarity and depth. They present all the …
of nitride semiconductors with an extraordinary clarity and depth. They present all the …
Absence of Fermi-level pinning at cleaved nonpolar InN surfaces
Prior experimental work had found that the Fermi level at InN growth surfaces is pinned well
above the conduction band edge, leading to strong surface band bending and electron …
above the conduction band edge, leading to strong surface band bending and electron …
Group III nitrides
Optical, electrical, mechanical, and thermal properties of group III nitrides, inclusive of AlN,
GaN, InN and their ternary and quaternary alloys, are discussed. The driving force for group …
GaN, InN and their ternary and quaternary alloys, are discussed. The driving force for group …
Effect of dislocations on electrical and electron transport properties of InN thin films. II. Density and mobility of the carriers
V Lebedev, V Cimalla, T Baumann… - Journal of applied …, 2006 - pubs.aip.org
The influence of dislocations on electron transport properties of undoped InN thin films
grown by molecular-beam epitaxy on AlN (0001) pseudosubstrates is reported. The …
grown by molecular-beam epitaxy on AlN (0001) pseudosubstrates is reported. The …
Near-infrared photoluminescence from vertical InN nanorod arrays grown on silicon: Effects of surface electron accumulation layer
We demonstrate that vertically aligned InN nanorods can be grown on Si (111) by plasma-
assisted molecular-beam epitaxy. Detailed structural characterization indicates that …
assisted molecular-beam epitaxy. Detailed structural characterization indicates that …
Experimental determination of electron affinities for InN and GaN polar surfaces
We have measured the electron affinities of clean, stoichiometric InN and GaN polar
surfaces via ultraviolet photoelectron spectroscopy. The electron affinities of InN were …
surfaces via ultraviolet photoelectron spectroscopy. The electron affinities of InN were …
Double Gaussian distribution of barrier heights and self-powered infrared photoresponse of InN/AlN/Si (111) heterostructure
InN epilayer has been grown by plasma-assisted molecular beam epitaxy on the AlN/n-Si
(111) substrate. The self-powered photodetection has been carried out with an infra-red (IR) …
(111) substrate. The self-powered photodetection has been carried out with an infra-red (IR) …
[图书][B] Semiconductor device-based sensors for gas, chemical, and biomedical applications
F Ren, SJ Pearton, SJ Pearton, F Ren - 2011 - api.taylorfrancis.com
According to a 2007 report entitled “Sensors: A Global Strategic Business Report,” the global
sensor market grew at an annual average rate of 4.5% between 2000 and 2008 and is …
sensor market grew at an annual average rate of 4.5% between 2000 and 2008 and is …