Molecular beam epitaxy growth of GaN, AlN and InN

X Wang, A Yoshikawa - Progress in crystal growth and characterization of …, 2004 - Elsevier
III-Nitrides receive much research attention and obtain significant development due to their
wide applications in light emitting diodes, laser diodes, ultraviolet detectors, solar cells, field …

When group-III nitrides go infrared: New properties and perspectives

J Wu - Journal of applied physics, 2009 - pubs.aip.org
Wide-band-gap GaN and Ga-rich InGaN alloys, with energy gaps covering the blue and
near-ultraviolet parts of the electromagnetic spectrum, are one group of the dominant …

[图书][B] Handbook of nitride semiconductors and devices, Materials Properties, Physics and Growth

H Morkoį - 2009 - books.google.com
The three volumes of this handbook treat the fundamentals, technology and nanotechnology
of nitride semiconductors with an extraordinary clarity and depth. They present all the …

Absence of Fermi-level pinning at cleaved nonpolar InN surfaces

CL Wu, HM Lee, CT Kuo, CH Chen, S Gwo - Physical review letters, 2008 - APS
Prior experimental work had found that the Fermi level at InN growth surfaces is pinned well
above the conduction band edge, leading to strong surface band bending and electron …

Group III nitrides

RA Ferreyra, C Zhu, A Teke, H Morkoç - Springer Handbook of Electronic …, 2017 - Springer
Optical, electrical, mechanical, and thermal properties of group III nitrides, inclusive of AlN,
GaN, InN and their ternary and quaternary alloys, are discussed. The driving force for group …

Effect of dislocations on electrical and electron transport properties of InN thin films. II. Density and mobility of the carriers

V Lebedev, V Cimalla, T Baumann… - Journal of applied …, 2006 - pubs.aip.org
The influence of dislocations on electron transport properties of undoped InN thin films
grown by molecular-beam epitaxy on AlN (0001) pseudosubstrates is reported. The …

Near-infrared photoluminescence from vertical InN nanorod arrays grown on silicon: Effects of surface electron accumulation layer

CH Shen, HY Chen, HW Lin, S Gwo… - Applied physics …, 2006 - pubs.aip.org
We demonstrate that vertically aligned InN nanorods can be grown on Si (111) by plasma-
assisted molecular-beam epitaxy. Detailed structural characterization indicates that …

Experimental determination of electron affinities for InN and GaN polar surfaces

SC Lin, CT Kuo, X Liu, LY Liang, CH Cheng… - Applied physics …, 2012 - iopscience.iop.org
We have measured the electron affinities of clean, stoichiometric InN and GaN polar
surfaces via ultraviolet photoelectron spectroscopy. The electron affinities of InN were …

Double Gaussian distribution of barrier heights and self-powered infrared photoresponse of InN/AlN/Si (111) heterostructure

AM Chowdhury, R Pant, B Roul, DK Singh… - Journal of Applied …, 2019 - pubs.aip.org
InN epilayer has been grown by plasma-assisted molecular beam epitaxy on the AlN/n-Si
(111) substrate. The self-powered photodetection has been carried out with an infra-red (IR) …

[图书][B] Semiconductor device-based sensors for gas, chemical, and biomedical applications

F Ren, SJ Pearton, SJ Pearton, F Ren - 2011 - api.taylorfrancis.com
According to a 2007 report entitled “Sensors: A Global Strategic Business Report,” the global
sensor market grew at an annual average rate of 4.5% between 2000 and 2008 and is …