We demonstrate two types of GaN-based flip-chip light-emitting diodes (FCLEDs) with highly
reflective Ag/TiW and indium-tin oxide (ITO)/distributed Bragg reflector (DBR) p-type Ohmic …

High-power and reliable GaN-based vertical light-emitting diodes (V-LEDs) on 4-inch silicon
substrate were fabricated and characterized in this article. The metallization scheme …

The implementation of reflective p-type Ohmic contact is an effective way to solve current
crowding and improve the optoelectronic performance of flip-chip light-emitting diodes …

In this work, Ag as a highly reflective mirror layer of gallium nitride (GaN)-based blue vertical
light-emitting diodes (VLEDs) has been systematically investigated by correlating scanning …

Nitride-based near-ultraviolet (NUV) flip-chip (FC) light-emitting diodes (LEDs) on patterned
sapphire substrate (PSS) with n-contact full-via-holes (FVH) structure have been fabricated …

High-performance green flip-chip light-emitting diode (FC-LED) was realized by combining
double-layer electrode and highly reflective hybrid reflector. The introduction of double-layer …

Due to merits of good thermal conductivity and vertical current distribution, vertical light-
emitting diodes (VLEDs) have been widely studied for many years. However, the wall plug …

This chapter describes high voltage LEDs and vertical LEDs. Firstly, the principles and
fabrication technologies of direct current high voltage LED and alternating current high …

This is to certify that the content of this dissertation, to the best of my knowledge, is my own
work. The dissertation contains no materials previously published or written by another …

In last two decades, InGaN/GaN light-emitting diodes have been one of the main focus of
research thanks to their low power consumption, high efficiency, long lifetime, high color …