There is much current interest in the optical properties of semiconductor nanowires, because
the cylindrical geometry and strong two-dimensional confinement of electrons, holes and …

We have experimentally investigated the radiative and nonradiative recombination in a
GaN/AlGaN multiple-quantum-well laser diode. The each carrier lifetime has been evaluated …

Metal halide perovskites are attractive materials for the realization of cheap and effective
solar cells, thin film transistors, and light emitters. Carrier diffusion at high excitations …

The Berreman effect, by which thin films of polar dielectric materials exhibit strong, narrow
resonances near their longitudinal optic (LO) phonon frequency, results in strong material …

Optical monitoring of nonequilibrium carrier dynamics was performed in freestanding GaN.
Four-wave mixing kinetics directly provided carrier lifetime of 5.4 ns in the layer, while …

Carrier recombination dynamics in GaN grown by hydride vapor-phase epitaxy has been
studied by means of transient photoluminescence under high photoexcitation conditions that …

Measurements of temperature-dependent and time-resolved photoluminescence (PL) on
individual GaN nanowires revealed PL lifetimes and values of internal quantum efficiency …

Due to high bonding energy of N _2 molecule, the III-V semiconducting nitrides, especially
GaN and InN require high N _2 pressure to be stable at high temperatures necessary for …

The growth of GaN from solution in gallium under high N2 pressure results in very low-
dislocation density (< 100cm− 2) crystals usually in the form of hexagonal platelets, but of …

Improved structural quality and radiative efficiency were observed in GaN thin films grown by
metalorganic chemical vapor deposition on TiN porous network templates formed by in situ …