Strain behavior and dopant activation of heavily in-situ B-doped SiGe epitaxial films treated by nanosecond laser annealing
C Jo, K Lee, D Yoon, DH Ko - Materials Science in Semiconductor …, 2024 - Elsevier
Heavily doped epitaxial films with an active dopant concentration over 1× 10 21/cm 3 in the
source/drain regions are key requirements for advanced metal-oxide-semiconductor field …
source/drain regions are key requirements for advanced metal-oxide-semiconductor field …