[HTML][HTML] Ferromagnetic semiconductor GaMnAs
The newly-developing spintronics technology requires materials that allow control of both
the charge and the spin degrees of freedom of the charge carriers. Ferromagnetic …
the charge and the spin degrees of freedom of the charge carriers. Ferromagnetic …
Curie point singularity in the temperature derivative of resistivity in (Ga, Mn) As
We observe a singularity in the temperature derivative d ρ/d T of resistivity at the Curie point
of high-quality (Ga, Mn) As ferromagnetic semiconductors with T c's ranging from …
of high-quality (Ga, Mn) As ferromagnetic semiconductors with T c's ranging from …
Low-temperature ferromagnetic properties of the diluted magnetic semiconductor
We report on magnetic and electrical transport properties of Sb 2− x Cr x Te 3 single crystals
with 0⩽ x⩽ 0.095 over temperatures from 2 K to 300 K. A ferromagnetic state develops in …
with 0⩽ x⩽ 0.095 over temperatures from 2 K to 300 K. A ferromagnetic state develops in …
Interplay between carrier localization and magnetism in diluted magnetic and ferromagnetic semiconductors
T Dietl - Journal of the Physical Society of Japan, 2008 - journals.jps.jp
The presence of localized spins exerts a strong influence on quantum localization in doped
semiconductors. At the same time carrier-mediated interactions between the localized spins …
semiconductors. At the same time carrier-mediated interactions between the localized spins …
[HTML][HTML] Investigation of orthogonal spin–orbit fields in crystalline ferromagnetic films with four-fold in-plane magnetic anisotropy
We report an investigation of current-induced spin–orbit fields (SOFs) in a crystalline (Ga,
Mn) As ferromagnetic film with four-fold in-plane anisotropy. By designing a Hall device with …
Mn) As ferromagnetic film with four-fold in-plane anisotropy. By designing a Hall device with …
—a narrow-gap ferromagnetic semiconductor
T Wojtowicz, G Cywiński, WL Lim, X Liu… - Applied Physics …, 2003 - pubs.aip.org
A narrow-gap ferromagnetic In 1− x Mn x Sb semiconductor alloy was grown by low-
temperature molecular-beam epitaxy on CdTe/GaAs hybrid substrates. Ferromagnetic order …
temperature molecular-beam epitaxy on CdTe/GaAs hybrid substrates. Ferromagnetic order …
Temperature dependence of magnetic anisotropy in ferromagnetic (Ga, Mn) As films: Investigation by the planar Hall effect
We carried out systematic planar Hall effect (PHE) measurements of GaMnAs ferromagnetic
semiconductor film as a function of temperature. The two-step switching of the PHE …
semiconductor film as a function of temperature. The two-step switching of the PHE …
[HTML][HTML] Field-free spin-orbit-torque switching of a single ferromagnetic layer with fourfold in-plane magnetic anisotropy
We present the observation of field-free spin-orbit-torque (SOT) switching of magnetization
in a ferromagnetic semiconductor (Ga, Mn) As film with four-fold in-plane magnetic …
in a ferromagnetic semiconductor (Ga, Mn) As film with four-fold in-plane magnetic …
Electrical and low-field magnetoresistance transport effect of La0.7Ca0.3MnO3: MnO2 composite ceramics
X Zhu, L Qi, H Wang, J Li, Y Li, Q Chen… - Journal of Sol-Gel Science …, 2024 - Springer
Simultaneously increasing the temperature coefficient of resistivity (TCR) and low-field
magnetoresistance (LFMR) has become important. Generally, Mn ions play an important …
magnetoresistance (LFMR) has become important. Generally, Mn ions play an important …
Transport properties of diluted magnetic semiconductors: Dynamical mean-field theory and Boltzmann theory
EH Hwang, S Das Sarma - Physical Review B—Condensed Matter and …, 2005 - APS
The transport properties of diluted magnetic semiconductors (DMS) are calculated using the
dynamical mean field theory (DMFT) and the Boltzmann transport theory. Within the DMFT …
dynamical mean field theory (DMFT) and the Boltzmann transport theory. Within the DMFT …