Two-dimensional devices and integration towards the silicon lines

S Wang, X Liu, M Xu, L Liu, D Yang, P Zhou - Nature materials, 2022 - nature.com
Despite technical efforts and upgrades, advances in complementary metal–oxide–
semiconductor circuits have become unsustainable in the face of inherent silicon limits. New …

2D heterostructures for ubiquitous electronics and optoelectronics: principles, opportunities, and challenges

PV Pham, SC Bodepudi, K Shehzad, Y Liu, Y Xu… - Chemical …, 2022 - ACS Publications
A grand family of two-dimensional (2D) materials and their heterostructures have been
discovered through the extensive experimental and theoretical efforts of chemists, material …

2D materials in flexible electronics: recent advances and future prospectives

AK Katiyar, AT Hoang, D Xu, J Hong, BJ Kim… - Chemical …, 2023 - ACS Publications
Flexible electronics have recently gained considerable attention due to their potential to
provide new and innovative solutions to a wide range of challenges in various electronic …

Phase engineering of 2D materials

D Kim, J Pandey, J Jeong, W Cho, S Lee… - Chemical …, 2023 - ACS Publications
Polymorphic 2D materials allow structural and electronic phase engineering, which can be
used to realize energy-efficient, cost-effective, and scalable device applications. The phase …

Controlled Synthesis and Accurate Doping of Wafer‐Scale 2D Semiconducting Transition Metal Dichalcogenides

X Li, J Yang, H Sun, L Huang, H Li, J Shi - Advanced Materials, 2023 - Wiley Online Library
Abstract 2D semiconducting transition metal dichalcogenide (TMDCs) possess atomically
thin thickness, a dangling‐bond‐free surface, flexible band structure, and silicon‐compatible …

Enhancing the Carrier Transport in Monolayer MoS2 through Interlayer Coupling with 2D Covalent Organic Frameworks

C Wang, L Cusin, C Ma, E Unsal, H Wang… - Advanced …, 2024 - Wiley Online Library
The coupling of different 2D materials (2DMs) to form van der Waals heterostructures
(vdWHs) is a powerful strategy for adjusting the electronic properties of 2D semiconductors …

Reduced dopant-induced scattering in remote charge-transfer-doped MoS2 field-effect transistors

J Jang, JK Kim, J Shin, J Kim, KY Baek, J Park… - Science …, 2022 - science.org
Efficient doping for modulating electrical properties of two-dimensional (2D) transition metal
dichalcogenide (TMDC) semiconductors is essential for meeting the versatile requirements …

Reducing Contact Resistance and Boosting Device Performance of Monolayer MoS2 by In Situ Fe Doping

H Li, M Cheng, P Wang, R Du, L Song, J He… - Advanced …, 2022 - Wiley Online Library
Abstract 2D semiconductors are emerging as plausible candidates for next‐generation
“More‐than‐Moore” nanoelectronics to tackle the scaling challenge of transistors. Wafer …

Facet engineering of ultrathin two-dimensional materials

L Li, Y Xia, M Zeng, L Fu - Chemical Society Reviews, 2022 - pubs.rsc.org
Ultrathin two-dimensional (2D) materials exhibit broad application prospects in many fields
due to the enhanced specific surface area to volume ratio and quantum confinement effect …

High‐Performance Solution‐Processed 2D P‐Type WSe2 Transistors and Circuits through Molecular Doping

T Zou, HJ Kim, S Kim, A Liu, MY Choi… - Advanced …, 2023 - Wiley Online Library
Semiconducting ink based on 2D single‐crystal flakes with dangling‐bond‐free surfaces
enables the implementation of high‐performance devices on form‐free substrates by cost …