The successful fabrication of Nanosheet (NS) FET by Samsung/IBM for below 7 nm
technology nodes has geared up the semiconductor industry towards future electronics. In …

In this work, we examine and benchmark the analog/RF performance metrics of silicon-
based multigate devices, such as Fin-FET, gate-all-around nanowire (NW)-FET, and gate-all …

In this study, for the very first time developing of n-and p-type 3-D single-channel (SC)
FinFET and gate-all-around (GAA) Multi-Bridge-Channel FETs (MBCFET) like nanowire FET …

While considering the low power demand as a fundamental bottleneck for nanoscale
devices, this work comprehensively investigates a novel concept that incorporates the area …

Abstract Silicon (Si) nanosheet (NS) metal-oxide semiconductor field effect transistors
(MOSFETs) are realized as an outstanding structure to obtain better area scaling and power …

In this paper, for the first time, the performance of 3D Nanosheet FETs (NSFETs) is reported
in the inversion (INV), accumulation (ACC), and junctionless (JL) modes at elevated …

In this study, for the first time we benchmark the DC/analog/RF performance of
Dielectric/Ferroelectric Stacked Negative capacitance (NC)-based multi-gate devices …

In this work are investigate d the DC and low frequency noise room-temperature operation of
p-channel gate-all-around (GAA) vertically stacked silicon nanosheets (NS). The key DC …

In this work, two types of gate-all-around (GAA) vertically stacked silicon nanosheet (NS)
FETs are investigated, the main difference being the vertical distance between the stacked …

In this work, DC and low frequency noise measurements are performed on n-channel gate
all around (GAA) vertically stacked silicon nanosheets (NS) at room and liquid nitrogen …