Investigation of the p-GaN gate breakdown in forward-biased GaN-based power HEMTs
AN Tallarico, S Stoffels, P Magnone… - IEEE Electron …, 2016 - ieeexplore.ieee.org
In this letter, we report a detailed experimental investigation of the time-dependent
breakdown induced by forward gate stress in GaN-based power HEMTs with a p-type gate …
breakdown induced by forward gate stress in GaN-based power HEMTs with a p-type gate …
[HTML][HTML] Design and analysis of 10 nm T-gate enhancement-mode MOS-HEMT for high power microwave applications
In this work, we propose a novel enhancement-mode GaN metal-oxide-semiconductor high
electron mobility transistor (MOS-HEMT) with a 10 nm T-gate length and a high-k TiO 2 gate …
electron mobility transistor (MOS-HEMT) with a 10 nm T-gate length and a high-k TiO 2 gate …
RF/analog and linearity performance evaluation of lattice-matched ultra-thin AlGaN/GaN gate recessed MOSHEMT with silicon substrate
In this article, the authors have demonstrated and analyzed various analog/RF, and linearity
performances of an AlGaN/GaN gate recessed MOSHEMT (GR-MOSHEMT) grown on a Si …
performances of an AlGaN/GaN gate recessed MOSHEMT (GR-MOSHEMT) grown on a Si …
Dual-surface modification of AlGaN/GaN HEMTs using TMAH and piranha solutions for enhancing current and 1/f-Noise Characteristics
We demonstrated dual-surface modification of GaN/AlGaN/GaN high-electron mobility
transistors using tetramethylammonium hydroxide (TMAH) and piranha solutions prior to …
transistors using tetramethylammonium hydroxide (TMAH) and piranha solutions prior to …
Oxide thickness dependent compact model of channel noise for E-mode AlGaN/GaN MOS-HEMT
In this paper, a compact channel noise model for gate recessed enhancement mode GaN
based MOS-HEMT which is valid for all regions of operation is proposed. The compact noise …
based MOS-HEMT which is valid for all regions of operation is proposed. The compact noise …
Effects of trap density on drain current LFN and its model development for E-mode GaN MOS-HEMT
In this paper the drain current low-frequency noise (LFN) of E-mode GaN MOS-HEMT is
investigated for different gate insulators such as SiO 2, Al 2 O 3/Ga 2 O 3/GdO 3, HfO 2/SiO …
investigated for different gate insulators such as SiO 2, Al 2 O 3/Ga 2 O 3/GdO 3, HfO 2/SiO …
Optimization of structural parameters in Omega (Ω)-Shaped gate p-GaN MIS-HEMT for performance improvement
In this paper, optimization of a novel p-GaN MIS-HEMT is performed and investigated for
improved performance. In the proposed device, we have incorporated an Omega (Ω) …
improved performance. In the proposed device, we have incorporated an Omega (Ω) …
Investigation of gate induced noise in E‐mode GaN MOS‐HEMT and its effect on noise parameters
In this paper, the effects of gate induced noise for a gate recessed enhancement‐mode GaN‐
based metal‐oxide‐semiconductor high electron mobility transistor (MOS‐HEMT) is …
based metal‐oxide‐semiconductor high electron mobility transistor (MOS‐HEMT) is …
Fabrication et caractérisation de transistors HEMT et de diodes à base de GaN pour la conversion de tension DC-DC en électronique de puissance
Q Fornasiero - 2022 - theses.hal.science
Ce travail de thèse s' inscrit dans une problématique constante d'intégrabilité des systèmes
électroniques à fortes densités de puissance et à haut rendement pour l'électronique de …
électroniques à fortes densités de puissance et à haut rendement pour l'électronique de …
Contribution à la modélisation non linéaire et l'optimisation des transistors à effet de champ à hétérojonction par des méthodes intelligentes
Z Touati - 2019 - thesis.univ-biskra.dz
Les transistors à hétérostructures MOS-HEMT à base de nitrure type AlGaN/GaN
apparaissent comme les meilleurs candidats pour les applications hyperfréquences, de …
apparaissent comme les meilleurs candidats pour les applications hyperfréquences, de …