The structure factor S (Q) of high purity amorphous Si membranes prepared by ion
implantation was measured over an extended Q range (0.03–55 Å− 1). Calculation of the …

Medium and high-energy x-ray diffraction has been used to study the atomic structure of
pure amorphous Si prepared by MeV Si implantation into crystalline silicon. Both as …

We report the results of highly sensitive transmission X-ray scattering measurements
performed at the Advanced Photon Source, Argonne National Laboratory, on nearly fully …

We introduce the concept of nearly hyperuniform network (NHN) structures as alternatives to
the conventional continuous random network (CRN) models for amorphous tetrahedrally …

A low-to high-density pressure-driven phase transition in amorphous silicon is investigated
by synchrotron x-ray diffraction in the diamond anvil cell. Complementary atomistic …

A thorough critical analysis of the theoretical relationships between the bond-angle
dispersion in a-Si⁠, Δ θ⁠, and the width of the transverse optical Raman peak, Γ⁠, is …

Virtual samples of approximations to real amorphous silicon, a-Si⁠, have been prepared
using several different processing routes. These include a fast quench from the melt …

We report results from an investigation into hidden anisotropy in pure fully-dense
amorphous silicon. For amorphous silicon in intimate contact with a crystalline Si (001) …

Multiscale simulations spanning length and time scales have been used to study the relation
between geometric order and structural properties of semiconducting materials for two …

This invention is in the field of physical chemistry and relates to novel hyperuniform and
nearly hyperuniform random network materials and methods of making said materials …