Reverse-conducting insulated gate bipolar transistor: A review of current technologies
EM Findlay, F Udrea - IEEE Transactions on Electron Devices, 2018 - ieeexplore.ieee.org
The reverse-conducting insulated gate bipolar transistor (RC-IGBT) has several benefits
over a separate IGBT and diode solution and has the potential to become the dominant …
over a separate IGBT and diode solution and has the potential to become the dominant …
A snapback suppressed reverse-conducting IGBT with a floating p-region in trench collector
A novel reverse-conducting insulated-gate bipolar transistor (RC-IGBT) featuring an oxide
trench placed between the n-collector and the p-collector and a floating p-region (p-float) …
trench placed between the n-collector and the p-collector and a floating p-region (p-float) …
A carrier-storage-enhanced superjunction IGBT with ultralow loss and on-state voltage
M Huang, B Gao, Z Yang, L Lai… - IEEE Electron Device …, 2018 - ieeexplore.ieee.org
A carrier-storage-enhanced superjunction (SJ) insulated gate bipolar transistor (CSE-SJ-
IGBT) is proposed and investigated. In the CSE-SJ-IGBT, the p-pillar is connected to the …
IGBT) is proposed and investigated. In the CSE-SJ-IGBT, the p-pillar is connected to the …
Simulation study of a low ON-state voltage superjunction IGBT with self-biased PMOS
J Huang, H Huang, XB Chen - IEEE Transactions on Electron …, 2019 - ieeexplore.ieee.org
In this brief, a novel superjunction (SJ)-insulated-gate bipolar transistor (SJ-IGBT) is
proposed and investigated by simulation, where a floating N-base region on the P-pillar …
proposed and investigated by simulation, where a floating N-base region on the P-pillar …
650 V super-junction insulated gate bipolar transistor based on 45 μm ultrathin wafer technology
Y Wu, Z Li, J Pan, C Chen, J Yu… - IEEE Electron Device …, 2022 - ieeexplore.ieee.org
In this letter, 650 V generation I (thin) and generation II (ultrathin) super-junction insulated
gate bipolar transistors (SJ-IGBT) based on deep trench etching and refilling processes are …
gate bipolar transistors (SJ-IGBT) based on deep trench etching and refilling processes are …
On the investigation of the “Anode Side” superJunction IGBT design concept
M Antoniou, N Lophitis, F Udrea… - IEEE Electron …, 2017 - ieeexplore.ieee.org
In this letter, we present the “anode-side” SuperJunction trench field stop+ IGBT concept with
drift region SuperJunction pillars placed at the anode side of the structure rather than the …
drift region SuperJunction pillars placed at the anode side of the structure rather than the …
Silicon-on-Insulator Lateral Insulated Gate Bipolar Transistor: Current Technologies and Prospects
Y Gu, J Ma, L Zhang, J Wei, S Li, S Liu… - … on Electron Devices, 2023 - ieeexplore.ieee.org
Compared with the discrete insulated gate bipolar transistor (IGBT), the silicon-on-insulator
lateral IGBT (SOI-LIGBT) owns the advantage of being integrated with peripheral circuits …
lateral IGBT (SOI-LIGBT) owns the advantage of being integrated with peripheral circuits …
Simulation study of a novel snapback-free and low turn-off loss reverse-conducting IGBT with controllable trench gate
A novel ultra-fast snapback-free controllable trench gate (CTG) reverse-conducting insulated
gate bipolar transistor (RC-IGBT) is proposed and investigated by simulation. It features a …
gate bipolar transistor (RC-IGBT) is proposed and investigated by simulation. It features a …
Novel approach toward plasma enhancement in trench-insulated gate bipolar transistors
M Antoniou, N Lophitis, F Bauer, I Nistor… - IEEE Electron …, 2015 - ieeexplore.ieee.org
In this letter, a trench-insulated gate bipolar transistor (IGBT) design with local charge
compensating layers featured at the cathode of the device is presented and analyzed. The …
compensating layers featured at the cathode of the device is presented and analyzed. The …
Band-to-band tunneling injection insulated-gate bipolar transistor with a soft reverse-recovery built-in diode
A band-to-band tunneling injection insulated-gate bipolar transistor (IGBT) featuring a tunnel
junction as the collector pn junction is proposed. The tunnel junction injects not only holes …
junction as the collector pn junction is proposed. The tunnel junction injects not only holes …