This paper have investigated the basic properties of inductively coupled plasma reactive ion
etching (ICP-RIE) of scandium doped aluminum nitride (Al 1-x Sc x N) thin films on 8-inch …

As the III-V semiconductor with the highest band gap, aluminum nitride (AlN) has broad
application prospects in the deep ultraviolet (UVC) field. AlN have unparalleled advantages …

In combination with higher piezoelectric effect and larger optical second-order susceptibility
(χ (2)) compared with aluminum nitride (AlN), scandium-doped aluminum nitride (AlScN) …

This work describes the development of an acoustic sensor based on piezoelectric ZnO thin
film to be utilized for aero-acoustic measurements. The design of the device was carried out …

To better understand the mechanisms of pulsed laser-assisted synthesis of metal nitride, a
numerical model was proposed to simulate the process of laser nitriding of aluminum. The …

This paper reports a new technique for fabrication of diaphragm and microchannel in a
single step for the development of a piezoelectric MEMS acoustic sensor. It describes the …

Aluminum nitride (AlN) ceramic is widely used in lots of fields, but its high-efficiency
preparation still needs to be developed. In this paper, AlN nanoparticles are prepared from …

This study illustrates the design, modeling and fabrication of a piezoelectric acoustic sensor
based on ZnO to be utilized for aeroacoustic measurements. In aeroacoustics, measurement …

Aluminum nitride (AlN) thin films have aroused the interest of researchers due to their
unique physicochemical properties. However, further studies on these semiconductor …

This research presents a mass sensor based on a piezoelectric thin-film MEMS oscillator
with high mass resolution, real-time detection, and extremely linear behavior for gas …