Silicon quantum electronics

FA Zwanenburg, AS Dzurak, A Morello… - Reviews of modern …, 2013 - APS
This review describes recent groundbreaking results in Si, Si/SiGe, and dopant-based
quantum dots, and it highlights the remarkable advances in Si-based quantum physics that …

Embracing the quantum limit in silicon computing

JJL Morton, DR McCamey, MA Eriksson, SA Lyon - Nature, 2011 - nature.com
Quantum computers hold the promise of massive performance enhancements across a
range of applications, from cryptography and databases to revolutionary scientific simulation …

Wet chemical routes to the assembly of organic monolayers on silicon surfaces via the formation of Si–C bonds: Surface preparation, passivation and functionalization

S Ciampi, JB Harper, JJ Gooding - Chemical Society Reviews, 2010 - pubs.rsc.org
Organic functionalization of non-oxidized silicon surfaces, while allowing for robust chemical
passivation of the inorganic substrate, is intended and expected to broaden the chemical …

[HTML][HTML] Towards atomic and close-to-atomic scale manufacturing

F Fang, N Zhang, D Guo, K Ehmann… - … Journal of Extreme …, 2019 - iopscience.iop.org
Human beings have witnessed unprecedented developments since the 1760s using
precision tools and manufacturing methods that have led to ever-increasing precision, from …

Directed block copolymer self-assembly for nanoelectronics fabrication

DJC Herr - Journal of Materials Research, 2011 - cambridge.org
This paper provides an overview of directed self-assembly (DSA) options that exhibit
potential for enabling extensible high-volume patterning of nanoelectronics devices. It …

Coherent control of Rydberg states in silicon

PT Greenland, SA Lynch, AFG Van Der Meer… - Nature, 2010 - nature.com
Laser cooling and electromagnetic traps have led to a revolution in atomic physics, yielding
dramatic discoveries ranging from Bose–Einstein condensation to the quantum control of …

High precision quantum control of single donor spins in silicon

R Rahman, CJ Wellard, FR Bradbury, M Prada… - Physical review …, 2007 - APS
The Stark shift of the hyperfine coupling constant is investigated for a P donor in Si far below
the ionization regime in the presence of interfaces using tight-binding and band minima …

Nanoscale imaging of mobile carriers and trapped charges in delta doped silicon p–n junctions

G Gramse, A Kölker, T Škereň, TJZ Stock, G Aeppli… - Nature …, 2020 - nature.com
Integrated circuits and certain silicon-based quantum devices require the precise positioning
of dopant nanostructures, and hydrogen resist lithography can be used to fabricate such …

[HTML][HTML] Tip-based nanofabrication for scalable manufacturing

H Hu, HJ Kim, S Somnath - Micromachines, 2017 - mdpi.com
Tip-based nanofabrication (TBN) is a family of emerging nanofabrication techniques that use
a nanometer scale tip to fabricate nanostructures. In this review, we first introduce the history …

Atomic‐scale manipulation and in situ characterization with scanning tunneling microscopy

W Ko, C Ma, GD Nguyen, M Kolmer… - Advanced Functional …, 2019 - Wiley Online Library
Scanning tunneling microscope (STM) has presented a revolutionary methodology to
nanoscience and nanotechnology. It enables imaging of the topography of surfaces …