Tip-enhanced photoluminescence nano-spectroscopy and nano-imaging
Abstract Photoluminescence (PL), a photo-excited spontaneous emission process, provides
a wealth of optical and electronic properties of materials, which enable microscopic and …
a wealth of optical and electronic properties of materials, which enable microscopic and …
Nonpolar III-nitride vertical-cavity surface-emitting lasers incorporating an ion implanted aperture
We report on our recent progress in improving the performance of nonpolar III-nitride vertical-
cavity surface-emitting lasers (VCSELs) by using an Al ion implanted aperture and …
cavity surface-emitting lasers (VCSELs) by using an Al ion implanted aperture and …
Comparison of blue and Green Ingan∕ Gan multiple-quantum-well light-emitting diodes grown by metalorganic vapor phase epitaxy
YD Qi, H Liang, D Wang, ZD Lu, W Tang… - Applied Physics …, 2005 - pubs.aip.org
In Ga N∕ Ga N multiple-quantum-well (MQW) blue and green-light-emitting diodes (LEDs)
were grown on sapphire substrates using metalorganic vapor phase epitaxy. High …
were grown on sapphire substrates using metalorganic vapor phase epitaxy. High …
Enhancement of light extraction through the wave‐guiding effect of ZnO sub‐microrods in InGaN blue light‐emitting diodes
The improvement of the light extraction efficiency (LEE) of a conventional InGaN blue light‐
emitting diode (LED) by the incorporation of one‐dimensional ZnO sub‐microrods is …
emitting diode (LED) by the incorporation of one‐dimensional ZnO sub‐microrods is …
Confocal microphotoluminescence of InGaN-based light-emitting diodes
K Okamoto, A Kaneta, Y Kawakami, S Fujita… - Journal of applied …, 2005 - pubs.aip.org
Spatially resolved photoluminescence (PL) of In Ga N∕ Ga N∕ Al Ga N-based quantum-
well-structured light-emitting diodes (LEDs) with a yellow-green light (530 nm) and an amber …
well-structured light-emitting diodes (LEDs) with a yellow-green light (530 nm) and an amber …
Two Distinct Origins of Highly Localized Luminescent Centers within InGaN/GaN Quantum‐Well Light‐Emitting Diodes
The high light‐output efficiencies of InxGa1‐xN quantum‐well (QW)‐based light‐emitting
diodes (LEDs) even in presence of a large number of nonradiative recombination centers …
diodes (LEDs) even in presence of a large number of nonradiative recombination centers …
A Novel Way to Fill Green Gap of GaN-Based LEDs by Pinning Defects in Nanorod Array
Nanorod array and planar green-emission InGaN/GaN multi-quantum well (MQW) LEDs
were fabricated by lithography, nano-imprinting, and top–down etching technology. The …
were fabricated by lithography, nano-imprinting, and top–down etching technology. The …
Efficient blue light-emitting diodes with InGaN/GaN triangular shaped multiple quantum wells
RJ Choi, YB Hahn, HW Shim, MS Han, EK Suh… - Applied physics …, 2003 - pubs.aip.org
InGaN/GaN triangular shaped multiple quantum wells (QWs) grown by grading In
composition with time were adopted as an active layer of blue light-emitting diodes (LEDs) …
composition with time were adopted as an active layer of blue light-emitting diodes (LEDs) …
Compositional instability in strained InGaN epitaxial layers induced by kinetic effects
In this article several kinetic effects are proposed that induce compositional instabilities in
thick InGaN heteroepitaxial layers on GaN templates grown by metalorganic chemical vapor …
thick InGaN heteroepitaxial layers on GaN templates grown by metalorganic chemical vapor …
Near-field scanning optical microscopic transient lens for carrier dynamics study in InGaN∕ GaN
K Okamoto, A Scherer, Y Kawakami - Applied Physics Letters, 2005 - pubs.aip.org
Time-resolved microscopic transient lens (TR-M-TL) and near-field scanning optical
microscopic transient lens (NSOM-TL) were performed to reveal temporal and spatial …
microscopic transient lens (NSOM-TL) were performed to reveal temporal and spatial …