This paper gives an overview on some state-of-the-art characterization methods of SiO2/4H-
SiC interfaces in metal oxide semiconductor field effect transistors (MOSFETs). In particular …

Energy efficient electronic design has become imperative due to the depletion of non-
renewable energy resources, worldwide increase in power consumption, and significant …

Wide-bandgap semiconductors such as silicon carbide, gallium nitride, and diamond are
inherently suitable for high power electronics for example in renewable energy applications …

Surfaces of semiconductors are notorious for the presence of electronic defects such that
passivation approaches are required for optimal performance of (opto) electronic devices …

Surface passivation of germanium is vital for optimal performance of Ge based
optoelectronic devices especially considering their rapidly increasing surface-to-volume …

In this work, the effects of the duration of the post deposition annealing (PDA) in nitric oxide
(NO) on the properties of SiO 2/4H–SiC interfaces in n-channel lateral MOSFETs are …

The electrical behavior of lateral 4H-SiC n-laterally-diffused metal-oxide semiconductor
(LDMOS) transistors with reduced surface field (RESURF) for integrated circuits was …

This paper reviews the feasibility of the state-of-the-art electrical techniques adopted from Si
technology for characterization of SiC MOS devices. The inability of these conventional …

In the present study, we characterize the nature of interface states in silicon carbide (SiC)
metal–oxide–semiconductor (MOS) systems by analyzing the electrical characteristics of …

Switching a silicon carbide (SiC) metal–oxide–semiconductor field-effect transistor between
inversion and accumulation with removed drain and grounded source terminals leads to …