Abstract A review of III–V nanowire-based infrared photodetectors is provided including
single nanowires, ensemble nanowires, and heterostructured nanowires. The performance …

III‐nitride semiconductors have attracted considerable attention in recent years owing to
their excellent physical properties and wide applications in solid‐state lighting, flat‐panel …

High temperature brings adverse impacts on the energy efficiency, and even destroys a
semiconductor device. Here, a novel and cost‐effective strategy is proposed to boost the …

Wide-band-gap GaN and Ga-rich InGaN alloys, with energy gaps covering the blue and
near-ultraviolet parts of the electromagnetic spectrum, are one group of the dominant …

The three volumes of this handbook treat the fundamentals, technology and nanotechnology
of nitride semiconductors with an extraordinary clarity and depth. They present all the …

We use density functional theory calculations with the HSE06 hybrid exchange-correlation
functional to investigate InGaN alloys and accurately determine band gaps and band …

In the past ten years, heteroepitaxy has continued to increase in importance with the
explosive growth of the electronics industry and the development of a myriad of …

; 124, 219906 (2006)]} XC functional. The band gap of InGaN alloys as a function of In
content is calculated and a strong bowing at low In content is found, described by bowing …

We review some salient points in the derivation of density functional theory (DFT) and of the
local density approximation (LDA) of it. We then articulate an understanding of DFT and LDA …

The electronic and optical properties of (In x Ga1–x) 2O3 alloys are highly tunable, giving
rise to a myriad of applications including transparent conductors, transparent electronics …