Gallium nitride high-electron-mobility transistors (GaN HEMTs) are at a point of rapid growth
in defense (radar, SATCOM) and commercial (5G and beyond) industries. This growth also …

High hole densities are desired in p‐channel field effect transistors to improve the speed
and on‐currents. Building on the recently discovered undoped, polarization‐induced …

A two-dimensional hole gas (2DHG) induced by polarization charges at the GaN/AlGaN
hetero-interface is attracting much attention because of its potential to develop p-channel …

The hole mobility enhancement mechanism of wurtzite (0001)-oriented gallium nitride
(GaN)/AlN heterojunction quantum well (QW) under stress engineering is investigated to …

In this study, we present the demonstration of controllable Si doping in N-polar AlN films
grown on single-crystal AlN substrates by plasma-assisted molecular beam epitaxy …

While terahertz spectroscopy can provide valuable information regarding the charge
transport properties in semiconductors, its application for the characterization of low …

Undoped GaN/AlN heterostructures with a high‐density 2D hole gas (2DHG) have recently
been reported, demonstrating that holes can be generated in GaN without magnesium (Mg) …

The ability to tune the interfacial thermal conductance of GaN/AlN heterojunction nanowires
(NWs) with a core/shell structure is shown using molecular dynamics and non-equilibrium …

Although the scanning microwave microscope (SMM) is based on the atomic force
microscope (AFM), the SMM differs from the AFM by being able to sense subsurface …

Since its discovery, the Raman effect has been a great ally in the structural investigation of a
wide variety of materials, from macro to nanoscale. However, despite the remarkable …